Block Copolymer Composition for Directed Self-Assembly Pattern Formation
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Solution Overview
Problem
Current pattern formation methods for miniaturization in semiconductor devices face challenges in achieving finer patterns with reduced defects and improved etching resistance, particularly in forming ordered patterns through directed self-assembly.
Innovation Solution
A composition comprising a block copolymer with a reactive group on its main chain and a solvent, which forms a directed self-assembling film with a phase separation structure, allowing for controlled phase separation and crosslinking to enhance pattern rectangularity and etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used for pattern formation, then fine patterns with line width of about 90 nm can be formed, but further finer pattern formation is difficult to achieve
Solution Approach 1:
The block copolymer performs directed self-assembly spontaneously without requiring external guidance patterns or complex lithography equipment. The polymer chains automatically organize into ordered phase separation structures through their inherent immiscibility, enabling fine pattern formation below 90 nm line width through self-directed assembly mechanisms
Solution Approach 2:
The invention changes the fundamental approach from top-down lithography to bottom-up self-assembly by altering the scale and mechanism of pattern formation. Using block copolymers with controlled block lengths and compositions enables pattern dimensions in the sub-90 nm range, achieving finer features through molecular-scale self-organization rather than optical or electron beam lithography
2Manufacturing precision
If directed self-assembly is used for pattern formation, then fine patterns can be formed, but defects in the phase separation structure occur
Solution Approach 1:
The invention introduces reactive groups at specific local positions (end blocks) of the block copolymer chains to enhance intermolecular interactions and stabilize the phase separation structure. This localized functionalization improves ordering and reduces defects without affecting the overall self-assembly mechanism, achieving better structural reliability in the formed patterns
Solution Approach 2:
The block copolymer combines different functional blocks (e.g., polystyrene and poly(methyl methacrylate)) with distinct properties into a single macromolecular structure. This composite architecture enables both spontaneous phase separation for pattern formation and controlled interactions through reactive groups, reducing defects while maintaining fine pattern capability
3Manufacturing precision
If block copolymer is used for directed self-assembly, then pattern formation is achieved, but etching resistance is insufficient
Solution Approach 1:
The reactive groups in the block copolymer undergo crosslinking reactions during or before the etching process to form a stabilized network structure. This preliminary crosslinking strengthens the pattern structure, providing sufficient etching resistance while preserving the fine patterns formed through directed self-assembly of the block copolymer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively inhibits defects in the phase separation structure, improves the rectangularity of the cross-sectional pattern shape, and enhances etching resistance, making it suitable for future miniaturization in semiconductor device manufacturing.
Implementation Method 1
a directed self-assembling film with a phase separation structure, allowing for controlled phase separation
Implementation Method 2
directed self-assembly, as generally referred to, that spontaneously forms an ordered pattern
Implementation Method 3
A part of the plurality of phases of the directed self-assembling film is removed
Data Source
AI summary
A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.