Block Copolymer Self-Assembly for Nano-Pattern Resolution
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Solution Overview
Problem
Current methods face challenges in forming nano-scale fine patterns in semiconductor devices due to image resolution limits of photolithography and the difficulty in applying direct self-assembly of polymer molecules to create patterns with different pitches.
Innovation Solution
A method involving the formation of a template portion, array of pillars, separation wall layer, and block copolymer layer to create phase-separated domains, allowing for the formation of nano-scale patterns through selective removal and etching processes, enabling the creation of patterns with varying dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used to form patterns, then manufacturing process is simple, but image resolution limit prevents formation of nano-scale fine patterns
Solution Approach 1:
The process is divided into multiple stages: first forming a template structure with pillars and separation walls, then applying block copolymer self-assembly to create fine patterns, and finally selectively removing sacrificial materials. This segmentation allows each stage to contribute to the final high-resolution pattern without requiring the entire process to achieve nano-scale precision simultaneously.
Solution Approach 2:
The template structure (pillars and separation walls) acts as an intermediary that guides the self-assembly of block copolymers. The separation wall layer serves as a mediator between the underlying layer and the block copolymer, enabling the formation of patterns with different pitches by controlling the self-assembly process within defined regions.
2Manufacturing precision
If direct self-assembly of polymer molecules is applied, then nano-scale pattern formation is achieved, but difficulty arises in creating patterns with different pitches
Solution Approach 1:
The template structure creates different local environments with varying pitch characteristics. The separation wall layer defines specific regions where block copolymers self-assemble into patterns with predetermined pitches. By adjusting the dimensions and spacing of pillars and separation walls in different areas, patterns with different pitches can be formed locally while maintaining overall process consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively overcomes the limitations of direct self-assembly technology by enabling the formation of nano-scale patterns with different pitches, enhancing the integration density of semiconductor devices and improving pattern resolution beyond traditional photolithography limits.
Implementation Method 1
forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer
Data Source
AI summary
A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer.