Block Copolymer Self-Assembly for Sub-Lithographic Patterning
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Solution Overview
Problem
Current methods for producing sub-lithographic features in flash memory devices are limited by the size constraints of lithographic techniques and are costly and incompatible with high-throughput production, hindering the increase in performance and density of flash memory transistors.
Innovation Solution
The use of block copolymer self-assembly methods, involving the deposition and annealing of block copolymers on substrates with specific topography to form sub-lithographic trenches, allowing for the creation of conductive or insulating lines without the need for expensive techniques like interferometry or EUV lithography, enabling patterning of larger areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If standard lithographic methods are used, then manufacturing process is simple and cost-effective, but manufacturing precision deteriorates for features of 57.5 nm or less
Solution Approach 1:
The patent introduces block copolymers as intermediary materials that self-assemble to form sub-lithographic patterns. These copolymers act as a mediator between the lithographic process and the final sub-lithographic features, enabling precise patterning at dimensions below the lithographic resolution limit through their inherent self-assembly properties
Solution Approach 2:
The block copolymers perform self-service by automatically self-assembling into ordered structures with precise sub-lithographic dimensions. This self-assembly process eliminates the need for complex lithographic equipment and processes, as the copolymers autonomously form the desired patterns through their molecular organization
2Manufacturing precision
If electron beam lithography or EUV lithography is used, then manufacturing precision improves for sub-lithographic features, but productivity decreases due to high costs and incompatibility with high throughput production
Solution Approach 1:
The block copolymers autonomously self-assemble into precise sub-lithographic patterns without requiring expensive electron beam or EUV lithography equipment. This self-organizing capability maintains manufacturing precision while enabling high-throughput production, as the self-assembly process can be performed using standard semiconductor manufacturing equipment at scale
Solution Approach 2:
The patent changes the physical and chemical parameters of the system by introducing block copolymers with specific molecular structures and self-assembly properties. This parameter change enables the formation of sub-lithographic features through thermal or solvent annealing processes that are compatible with high-throughput manufacturing, replacing the need for low-throughput expensive lithography methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of sub-lithographic features over larger areas, enhancing the density and performance of flash memory devices without the limitations and costs associated with existing methods, facilitating high-throughput production.
Implementation Method 1
Self-assembly of block copolymers has been used to prepare features on substrates
Implementation Method 2
annealing the block copolymer to allow the block copolymer to self-assemble
Implementation Method 3
crosslinking a portion of the set of lamellae that includes a first block of the self-assembled block copolymer
Data Source
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AI summary
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.