Self-Assembled Block Copolymer Stacked Structures via Bootstrap Self-Templating
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Solution Overview
Problem
Conventional methods for fabricating nanoscale devices and structures, such as optical lithographic processing, struggle to produce features below 100 nm, and self-assembling diblock copolymers face limitations in achieving the required aspect ratio and dimensionality, particularly in the z-axis direction, due to the necessity of casting thin films.
Innovation Solution
The use of graphoepitaxy techniques with trenches to induce orientation and registration of self-assembling diblock copolymer films, forming stacked structures with controlled polymer domain orientation, allowing for the creation of ordered nanostructures with enhanced aspect ratio and dimensionality by using a base film as a template for subsequent block copolymer layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-assembling diblock copolymer thin films are used for nanoscale patterning, then resolution below 100 nm is achieved, but the aspect ratio and dimensionality in the z-axis direction are limited
Solution Approach 1:
The patent transitions from two-dimensional thin film patterning to three-dimensional stacked structures by depositing multiple sequential block copolymer layers that self-assemble into vertically stacked patterns, thereby achieving high aspect ratios while maintaining nanoscale resolution
Solution Approach 2:
The patent uses preliminary lithographic patterning to create registration marks and alignment features before depositing block copolymer layers, ensuring precise registration and alignment of stacked structures to achieve the required dimensional control
2Ease of manufacture
If conventional optical lithographic processing is used, then fabrication process is simple, but features below 100 nm cannot be produced
Solution Approach 1:
The patent introduces self-assembling block copolymers as an intermediary patterning layer that bridges conventional lithography and nanoscale feature formation, using the copolymers' spontaneous self-assembly to achieve sub-100 nm resolution without requiring advanced lithographic equipment
Solution Approach 2:
The block copolymers perform self-service by spontaneously self-assembling into ordered micropatterns through microphase separation, eliminating the need for complex lithographic processing to achieve nanoscale feature sizes
3Manufacturing precision
If electron beam or EUV lithography is used to achieve comparable resolution, then manufacturing precision is improved, but fabrication cost increases significantly
Solution Approach 1:
The patent uses relatively inexpensive block copolymer materials that can be deposited and processed in standard semiconductor fabrication equipment, providing a low-cost alternative to expensive electron beam or EUV lithography while achieving comparable or superior resolution
4Manufacturing precision
If graphoepitaxy techniques with trenches are used to induce orientation, then registration and alignment of self-assembled blocks is controlled, but device complexity increases
Solution Approach 1:
The patent creates preliminary lithographic patterns and registration marks before block copolymer deposition, establishing a template that guides the self-assembly process and ensures precise alignment of stacked structures without requiring complex real-time control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the fabrication of nanoscale arrays with improved aspect ratios and dimensional control, exceeding the limitations of conventional techniques while reducing fabrication costs compared to electron beam or EUV lithography, and achieving long-range ordering and registration for nanoscale features.
Implementation Method 1
Diblock copolymer films spontaneously assembly into periodic structures by microphase separation of the constituent polymer blocks after annealing, for example, by thermal annealing above the glass transition temperature of the polymer
Implementation Method 2
Diblock copolymer films spontaneously assembly into periodic structures by microphase separation of the constituent polymer blocks
Implementation Method 3
Diblock copolymer films spontaneously assembly into periodic structures by microphase separation of the constituent polymer blocks
Implementation Method 4
Graphoepitaxy techniques using defined topography such as trench edges have been used in an attempt to orient and order copolymer domains
Data Source
AI summary
Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.