Block Copolymer Composition for Sub-10 nm Patterning
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Solution Overview
Problem
Current block copolymers face challenges in achieving sub-10 nm technology nodes due to limitations in pattern size and etch selectivity, with issues like weak segregation strength and mismatched surface energies leading to alignment issues, making it difficult to form small features with low line edge roughness and effective pattern transfer.
Innovation Solution
A composition comprising block copolymers with a higher surface energy first block and a lower surface energy second block, where the chi parameter is greater than 0.04 at 200°C, allowing for phase separation into cylindrical or lamellar domains, and a method involving controlled polymerization to synthesize these copolymers, enabling perpendicular orientation and high temperature annealing for stable pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If block copolymers with high chi parameter are used to achieve stronger segregation strength, then pattern definition and etch selectivity are improved, but surface energy mismatch causes lamellae to align parallel rather than perpendicular to the substrate
Solution Approach 1:
The patent applies local quality by creating a composition where different block copolymers have different chi parameters and surface energies. Specifically, it uses a first block copolymer with high chi parameter for strong segregation and a second block copolymer with lower surface energy to modify the interfacial properties. This local differentiation allows the bulk to maintain strong segregation while the surface is engineered to promote perpendicular alignment through reduced surface energy mismatch.
Solution Approach 2:
The patent employs composite materials by combining multiple block copolymer components in a single composition. The formulation includes a first block copolymer with high chi parameter and a second block copolymer with complementary properties, creating a composite system that simultaneously achieves strong segregation strength and controlled perpendicular orientation. This composite approach allows the material to exhibit both high chi behavior for pattern definition and surface energy tuning for alignment control.
2Manufacturing precision
If conventional block copolymers are used for sub-10 nm patterning, then pattern formation is attempted, but weak etch selectivity and line edge roughness prevent effective pattern transfer
Solution Approach 1:
The patent applies parameter changes by systematically varying the chi parameter and surface energy of the block copolymer composition to optimize both pattern definition and etch selectivity. By adjusting the molecular weight, composition ratios, and thermal processing conditions, the material achieves enhanced etch resistance and reduced line edge roughness while maintaining sub-10 nm pattern fidelity. The high chi parameter ensures strong microphase separation for sharp patterns, while the surface energy modification enables reliable pattern transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of stable perpendicularly oriented block copolymer films with high etch resistance and low defects, allowing for the creation of features with periodicity less than 50 nanometers and improved line width roughness, suitable for advanced semiconductor patterning.
Implementation Method 1
the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate; where the second block copolymer phase separates into a second morphology of cylindrical, lamellar or spherical domains when singly disposed on a substrate
Implementation Method 2
Directed Self-Assembly (DSA) of block copolymers is one method of advanced patterning technologies that enable sub-10 nm technology nodes
Implementation Method 3
a method involving controlled polymerization to synthesize these copolymers, enabling perpendicular orientation and high temperature annealing for stable pattern formation
Data Source
AI summary
Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.