Block Copolymer Self-Assembly for Sub-40nm Semiconductor Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional photolithography processes struggle to form patterns with critical dimensions below 40 nm due to resolution limits, and double patterning methods are complex and costly, necessitating the development of alternative techniques for forming fine and minute patterns in semiconductor devices.
Innovation Solution
A direct self-assembly method using a block copolymer to form mask pattern structures with guide patterns and self-aligned layers, allowing for the creation of preliminary holes and subsequent etching to achieve precise pattern formation in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used, then pattern formation is achieved, but critical dimension below 40 nm cannot be obtained due to resolution limit
Solution Approach 1:
The patent employs block copolymer segmentation where different polymer blocks (e.g., PS-PMMA) self-assemble into distinct phases that form the patterned structures. This segmentation allows achieving sub-40nm critical dimensions by utilizing the nanoscale phase separation of polymer blocks rather than relying on photolithography resolution limits
Solution Approach 2:
The patent introduces guide patterns as intermediary structures that direct the self-assembly of block copolymers. These guide patterns serve as templates or mediators that control where the block copolymer domains form, enabling precise pattern placement while achieving fine critical dimensions through the self-assembly process
2Manufacturing precision
If double patterning method is used, then fine patterns can be formed, but process complexity and cost increase
Solution Approach 1:
The patent utilizes self-service through direct self-assembly (DSA) of block copolymers where the material automatically organizes itself into the desired pattern without requiring multiple manual patterning steps. The block copolymer's inherent phase separation behavior performs the patterning function autonomously, reducing process complexity compared to double patterning methods
Solution Approach 2:
The patent applies preliminary action by first forming guide patterns that pre-defend the locations where block copolymer domains will self-assemble. This preliminary structuring enables subsequent self-assembly to occur at precise locations, achieving fine patterns in a single self-assembly step rather than requiring multiple patterning cycles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of precise, fine patterns in semiconductor devices by using a block copolymer to self-assemble into specific patterns, overcoming the limitations of conventional photolithography and reducing the complexity and cost associated with double patterning techniques.
Implementation Method 1
A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. In the formation of the self-aligned layer on the object layer and the guide patterns, a first self-aligned pattern self-assembled at a central portion of the first opening and between the guide patterns neighboring each other
Implementation Method 2
The first self-aligned pattern and the second self-aligned pattern may include the first polymer unit and the second polymer unit, respectively
Data Source
AI summary
In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.