Directed Self-Assembly of Block Copolymers for Sub-22 nm Via Uniformity

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Solution Overview

Problem

Conventional optical lithography struggles to achieve uniformity and precision in forming vias with critical dimensions below 22 nm, leading to significant variations and limitations in semiconductor device manufacturing.

Innovation Solution

The use of directed self-assembly of block copolymers on substrates with pre-defined openings, where the block copolymers phase-separate into self-assembled domains, which are then selectively removed to form holes with reduced critical dimension variations, enabling the creation of more uniform vias that can be transferred into the underlying substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional optical lithography is used to form vias with critical dimensions below 22 nm, then the manufacturing process can be maintained with existing tools, but the critical dimension uniformity deteriorates significantly

Engineering Contradiction:
Improvecritical dimension uniformityVSAvoiddevice performance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The block copolymer system performs self-assembly to automatically form uniform micellar structures within the openings. The amphiphilic blocks spontaneously organize into core-shell micelles with uniform dimensions, eliminating the need for external intervention to achieve critical dimension uniformity. This self-service mechanism directly addresses the lithography resolution limit by allowing the material itself to define the precise via dimensions.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The invention changes the physical and chemical parameters of the system by introducing block copolymers with specific block ratios and molecular weights. By adjusting these parameters, the micelle size and distribution can be controlled to achieve the desired critical dimension uniformity. The phase separation behavior and self-assembly characteristics are tuned through parameter optimization to resolve the contradiction between existing tool capabilities and the need for higher precision.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the size of initial openings is reduced to achieve tighter pitch vias, then the via density increases, but the variation in critical dimensions increases

Engineering Contradiction:
Improvevia densityVSAvoidcritical dimension variation
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The block copolymer micelles serve as self-defined templates that automatically establish uniform via dimensions regardless of the initial opening size variations. The self-assembly process inherently corrects for opening size variations by forming micelles with consistent core dimensions, thereby maintaining critical dimension uniformity while enabling tighter pitch and higher via density.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The invention applies local quality control by allowing the block copolymer to form micelles with specific local structures within each opening. The core-shell morphology provides localized order and uniformity within each via location, ensuring that each via achieves the target critical dimension independently of variations in the initial opening pattern.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If block copolymers are used to form self-assembled domains, then the critical dimension uniformity improves, but the process complexity increases

Engineering Contradiction:
Improvecritical dimension uniformityVSAvoidpatterning process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The block copolymer system performs self-assembly to automatically form uniform micellar structures within the openings. The amphiphilic blocks spontaneously organize into core-shell micelles with uniform dimensions, eliminating the need for external intervention to achieve critical dimension uniformity. This self-service mechanism directly addresses the lithography resolution limit by allowing the material itself to define the precise via dimensions.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The invention changes the physical and chemical parameters of the system by introducing block copolymers with specific block ratios and molecular weights. By adjusting these parameters, the micelle size and distribution can be controlled to achieve the desired critical dimension uniformity. The phase separation behavior and self-assembly characteristics are tuned through parameter optimization to resolve the contradiction between existing tool capabilities and the need for higher precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly reduces the percentage variation in the critical dimensions of the formed holes compared to the initial openings, allowing for the production of vias with improved uniformity and reduced process variability, even at tight pitches, thereby extending the resolution limits of current lithography techniques.

Implementation Method 1

Under the right conditions, the blocks of such copolymers phase separate into microdomains (also known as 'microphase-separated domains' or 'domains') to reduce the total free energy, and in the process, nanoscale features of dissimilar chemical composition are formed.

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 2

the blocks of such copolymers phase separate into microdomains to reduce the total free energy

Methodology Applied
Scientific EffectPhase separation: Phase Change

Data Source

PatentUS8114306B2Method of forming sub-lithographic features using directed self-assembly of polymers
Publication Date: 2012.02.14 GLOBALFOUNDRIES US INC
  • US8114306B2 patent drawing
  • US8114306B2 patent drawing
  • US8114306B2 patent drawing

AI summary

Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.