Blocking Element Stacked on Thin Film Transistor for Array Substrate
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Solution Overview
Problem
In PSVA liquid crystal display panels, the transverse electrode is too close to the pixel electrode, leading to short circuits and impaired functionality due to ITO residue formation during deposition, which affects the normal operation of the pixel electrode.
Innovation Solution
The introduction of a blocking element that enhances the vertical height of the transverse electrode, creating a greater distance between the transverse electrode and the thin film transistor, and positioning the transverse electrode on a lateral side of the thin film transistor, thereby avoiding the need for the electrode to bend and reducing the risk of ITO residue and short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the transverse electrode is positioned close to the pixel electrode to avoid the thin film transistor, then the electrode can pass through the metal gap, but it causes ITO residue formation and short circuit between the pixel electrode and transverse electrode
Solution Approach 1:
The patent introduces a blocking element that extends in the vertical dimension (thickness direction) between the transverse electrode and the thin film transistor. This vertical positioning allows the transverse electrode to maintain close horizontal distance to the pixel electrode for easy routing, while the vertical separation prevents ITO residue formation and short circuits. The blocking element creates a three-dimensional spatial arrangement that resolves the contradiction between ease of electrode routing and reliability.
2Ease of manufacture
If the transverse electrode bends to avoid the thin film transistor, then it can pass through the metal gap, but it increases the risk of ITO residue and short circuit
Solution Approach 1:
The blocking element acts as an intermediary structure positioned between the transverse electrode and the thin film transistor. Instead of bending the transverse electrode to avoid the transistor, the blocking element provides a vertical barrier that allows the electrode to pass through horizontally while preventing contact with the transistor. This intermediary structure eliminates the need for electrode bending, simplifying manufacturing and reducing ITO residue risks.
3Object-affected harmful factors
If the shielding electrode totally covers the data line, then it effectively reduces light leakage, but it is easily affected by high/low potential signals causing voltage difference with the color filter
Solution Approach 1:
The patent segments the shielding electrode into multiple parts: a first shielding electrode portion covering the data line for light leakage prevention, and a second shielding electrode portion positioned away from the data line for voltage stability. The blocking element is positioned between these portions to electrically isolate them. This segmentation allows the shielding electrode to simultaneously achieve effective light leakage reduction while maintaining stable voltage by preventing coupling with data line signals.
Data Source
AI summary
An array substrate, a liquid crystal display panel and a liquid crystal display apparatus are provided. The array substrate comprising first substrate; thin film transistor and data line are positioned on first substrate, data line electrically connecting with source or drain of thin film transistor; blocking element stacking positioned on thin film transistor; first shielding electrode and second shielding electrode located on lateral side of data line which away first substrate, vertical projections of first shielding electrode and second shielding electrode on first substrate are respectively covering data lines, thin film transistor positioned between first shielding electrode and second shielding electrode; transverse electrode connecting between first shielding electrode and second shielding electrode, transverse electrode located on lateral side of thin film transistor which away first substrate, and at least partial of transverse electrode is stacked positioned on blocking element.