Selective Blocking Layer Deposition for Semiconductor Miniaturization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in device miniaturization due to the complexity of fabrication steps, particularly in selectively depositing materials on conductive surfaces without affecting dielectric surfaces, necessitating a method to deactivate or block conductive surfaces effectively.
Innovation Solution
The method involves exposing substrates with conductive and dielectric surfaces to carboxylic acids, hydrazides, or gaseous alkyl phosphonic acids to form selective blocking layers, which preferentially adhere to conductive surfaces, allowing for the deposition of films while minimizing deposition on dielectric surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective deposition methods are used to deposit films on dielectric surfaces, then deposition selectivity is improved, but conductive surfaces cannot be effectively blocked from deposition
Solution Approach 1:
The patent applies preliminary action by depositing a blocking layer on conductive surfaces before the main film deposition process. This blocking layer is formed in advance to prevent unwanted deposition on conductive surfaces during subsequent processing steps, thereby achieving both deposition selectivity and reliable blocking effectiveness
Solution Approach 2:
The patent uses an intermediary blocking layer as a mediator between the conductive surface and the incoming film deposition precursor. This intermediate layer selectively adheres to conductive surfaces and prevents direct deposition, enabling control over where films are deposited without affecting the underlying conductive surface properties
2Manufacturing precision
If multiple lithography steps are integrated to achieve device miniaturization, then manufacturing precision is improved, but fabrication complexity increases
Solution Approach 1:
The patent extracts and removes the need for costly lithographic steps by using selective deposition methods. By depositing films directly onto patterned substrates through selective adhesion to dielectric surfaces, the process eliminates intermediate lithography steps while maintaining the ability to achieve device miniaturization
Solution Approach 2:
The patent applies multi-functionality by using a single selective deposition process that can replace multiple lithography steps. The blocking layer and selective deposition system serve multiple functions: defining patterns, controlling film location, and enabling miniaturization, thereby simplifying the overall fabrication scheme
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the selective deposition of blocking layers on conductive surfaces, facilitating the deposition of films with high selectivity and reducing the need for costly lithographic steps, thereby supporting the miniaturization of semiconductor devices.
Implementation Method 1
exposing a substrate comprising a conductive material having a first surface and a dielectric material having a second surface to a carboxylic acid to selectively form a blocking layer on the first surface
Implementation Method 2
exposing a substrate comprising a conductive material having a first surface and a dielectric material having a second surface to a hydrazide to selectively form a blocking layer on the first surface
Implementation Method 3
exposing a substrate comprising a conductive material having a first surface and a dielectric material having a second surface to a gaseous alkyl phosphonic acid to selectively form a blocking layer on the first surface
Data Source
AI summary
Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.