Blocking Layer Structure for Hydrogen-Stable Semiconductor Channels
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Solution Overview
Problem
In semiconductor device fabrication, particularly in the BEOL portion, transistor devices face performance degradation due to hydrogen diffusion from source/drain contacts, which affects the channel layer's stability and threshold voltage, and existing buffer layers can intermix with the channel layer, disrupting its chemical distribution and performance.
Innovation Solution
The implementation of buffer layers around source/drain contacts to prevent hydrogen diffusion and the use of blocking layers to maintain the channel layer's chemical distribution, ensuring that hydrogen gas and ions do not intermix with the channel layer, thereby stabilizing the device during thermal processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If buffer layers are used to prevent hydrogen diffusion from source/drain contacts, then hydrogen diffusion is reduced, but the buffer layers can intermix with the channel layer, disrupting its chemical distribution
Solution Approach 1:
A blocking layer is introduced as an intermediary between the buffer layer and the channel layer. This blocking layer prevents direct contact and intermixing between the buffer layer and channel layer, while still allowing the buffer layer to perform its function of preventing hydrogen diffusion from source/drain contacts. The blocking layer acts as a mediator that resolves the conflict between hydrogen protection and chemical purity.
Solution Approach 2:
The protective structure is segmented into multiple distinct layers: source/drain contacts, buffer layer, blocking layer, and channel layer. This segmentation allows each layer to perform its specific function independently - the buffer layer handles hydrogen diffusion prevention while the blocking layer handles intermixing prevention, and the channel layer maintains its chemical distribution without direct exposure to the buffer layer.
2Reliability
If buffer layers are placed around source/drain contacts to stabilize the channel layer, then hydrogen diffusion is prevented, but device complexity increases due to additional layers
Solution Approach 1:
The blocking layer serves as a thin intermediary that enables the buffer layer to provide stability and hydrogen protection while minimizing the increase in device complexity. By using a blocking layer with optimized thickness and material properties, the structure achieves reliable channel layer protection without excessive complexity.
Solution Approach 2:
The thickness and material composition of the blocking layer are optimized to achieve the necessary protection function with minimal added complexity. By carefully controlling the parameters of the blocking layer (thickness, material properties), the design achieves effective hydrogen diffusion prevention and intermixing prevention while keeping the overall device complexity manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces hydrogen diffusion and intermixing, enhancing the stability and performance of transistors by maintaining the intended chemical distribution of the channel layer, thus mitigating performance degradation during thermal-related processes.
Implementation Method 1
hydrogen diffusion from source/drain contacts
Implementation Method 2
buffer layers include a material that receives hydrogen
Implementation Method 3
blocking layers respectively located over the channel layer and respectively surrounding the buffer layers
Data Source
AI summary
A semiconductor device includes a gate electrode, a gate dielectric located over the gate electrode, a channel layer including a semiconductor material and located over the gate dielectric, blocking layers located over the channel layer, covering portions of channel layer, and spaced apart from each other, buffer layers respectively located over the blocking layers, respectively surrounded by the blocking layers, and including a material that receives hydrogen, and source/drain contacts respectively located over the buffer layers and respectively surrounded by the buffer layers.