Blue Laser Irradiation for Low-Cost Semiconductor Layer Activation
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Solution Overview
Problem
The high cost of excimer laser light sources and the need for multiple continuous wave semiconductor lasers to achieve pulsed laser output make it difficult to reduce the component cost of laser irradiation apparatuses for semiconductor manufacturing, while also limiting the efficiency of the process.
Innovation Solution
A laser irradiation apparatus using a blue semiconductor laser light source with an optical system that generates laser light with a wavelength between 250 nm and 500 nm, applied to a semiconductor substrate with a spot size larger than the chip area, and a driving mechanism to change the irradiation position, allowing for efficient activation of semiconductor layers with reduced cost and improved productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If an excimer laser light source is used, then laser irradiation can be performed with sufficient output power, but the apparatus cost becomes high
Solution Approach 1:
The invention changes the wavelength parameter of the laser light source from conventional UV excimer laser (193nm) to blue semiconductor laser (405nm), which allows using cheaper light sources while maintaining effective laser irradiation for semiconductor processing
Solution Approach 2:
The invention replaces expensive excimer laser light sources with cheaper semiconductor laser light sources, reducing apparatus cost while maintaining functional effectiveness for semiconductor layer activation
2Adaptability or versatility
If a continuous wave semiconductor laser is modulated into pulsed laser light by a modulator, then the laser can be used for semiconductor processing, but the output power is lowered and more light sources are required
Solution Approach 1:
The invention uses periodic pulsed laser irradiation with optimized pulse width (1 ns to 100 μs) and duty cycle (1% to 100%) to achieve effective semiconductor layer activation while maintaining high output power from semiconductor laser light sources without requiring multiple units
3Manufacturing precision
If a small spot size laser is used, then precise irradiation can be achieved, but the processing area is limited and productivity decreases
Solution Approach 1:
The invention merges multiple irradiation functions into a single laser system by implementing both precise spot irradiation and wide-area line irradiation capabilities using the same blue semiconductor laser light source, achieving both precision and high productivity
Solution Approach 2:
The invention dynamically adjusts the laser beam shape and irradiation mode (spot or line) based on processing requirements, allowing flexible switching between precise local activation and large-area processing to maximize productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables a cost-effective and productive laser irradiation process for semiconductor devices, achieving uniform activation of semiconductor layers with deep penetration and reduced thermal stress, suitable for manufacturing power semiconductor devices and other chip types.
Implementation Method 1
a semiconductor laser light source configured to generate laser light having a wavelength no shorter than 250 nm and no longer than 500 nm
Implementation Method 2
an optical system unit configured to guide the laser light to a semiconductor substrate
Data Source
AI summary
A laser irradiation apparatus (1) according to an embodiment is a laser irradiation apparatus configured to activate a semiconductor layer of a semiconductor device, including: a semiconductor laser light source (35) configured to generate laser light (15) having a wavelength no shorter than 250 nm and no longer than 500 nm; an optical system unit (30) configured to guide the laser light to a semiconductor substrate; and a driving mechanism configured to change a relative irradiation place of the laser light in the semiconductor substrate.