BMS Protection Circuit for MOSFET Avalanche Prevention

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Solution Overview

Problem

Existing battery management systems (BMS) face challenges in protecting MOSFETs from degradation due to voltage spikes during short-circuit events, as energy accumulated in inductive elements can cause the MOSFET to conduct and enter avalanche mode even when switched OFF.

Innovation Solution

A vehicle battery system is provided with a BMS that includes a cutoff circuit electrically coupled to a short-circuit protection circuit. The short-circuit protection circuit features a diode array that redirects and dissipates excess current, while a reverse bias protection circuit maintains the MOSFET in an OFF state by directing current to a low-current leakage transistor, preventing the MOSFET from conducting.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a current detection circuit is implemented to detect higher current and switch OFF the MOSFET in time, then the MOSFET switching response is improved, but the MOSFET still risks degradation due to energy accumulated in inductive elements causing avalanche mode

Engineering Contradiction:
ImproveMOSFET switching response speedVSAvoidMOSFET degradation risk
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent applies preliminary action by implementing a protection circuit that proactively clamps the drain-source voltage before the MOSFET can enter avalanche mode. The circuit includes a voltage clamp mechanism that activates when voltage spikes are detected, preventing the voltage from reaching dangerous levels that would cause MOSFET breakdown, thus protecting the MOSFET even during rapid switching events.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements beforehand cushioning by incorporating energy dissipation elements (such as resistors and diodes) in parallel with the MOSFET. These elements provide a safe path for inductive kickback energy to dissipate before it can damage the MOSFET, effectively cushioning the MOSFET against voltage spikes and avalanche conditions during switching operations.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If protection circuits are added to mitigate voltage spikes, then the MOSFET reliability is improved, but the device complexity increases

Engineering Contradiction:
ImproveMOSFET protection from degradationVSAvoidBMS circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies merging by integrating the protection circuit functions directly into the existing BMS power management architecture. The protection circuit shares common components (such as control signals and power supply connections) with the normal operating circuitry, allowing voltage spike protection to be provided without adding completely separate protective subsystems, thus reducing overall complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements universality by designing protection circuit elements that serve multiple functions. For example, the same circuit components that manage normal power distribution also provide over-voltage protection and energy dissipation during fault conditions. This multi-functionality reduces the need for dedicated protection-only components, thereby minimizing the increase in device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively protects the MOSFET and other components from degradation by maintaining the MOSFET in an OFF state during reverse bias or short-circuit conditions, thereby preventing voltage spikes and energy accumulation that could lead to avalanche mode.

Implementation Method 1

the short-circuit protection circuit includes a diode array, where cathodes of the diode array are directly electrically coupled to a positive terminal post of the battery pack and anodes of the diode array are directly electrically coupled to a negative terminal post of the battery pack

Methodology Applied
Scientific EffectDiode rectification: Diode

Implementation Method 2

a reverse bias protection circuit maintains the MOSFET in an OFF state by directing current to a low-current leakage transistor, preventing the MOSFET from conducting

Methodology Applied
Scientific EffectReverse bias protection:

Implementation Method 3

energy accumulated in inductive elements, such as in an electrical load, or in electrical lines coupling battery system components may result in the MOSFET being conducted

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS12266924B2Protection circuit for battery management system
Publication Date: 2025.04.01 A123 SYSTEMS LLC
  • US12266924B2 patent drawing
  • US12266924B2 patent drawing
  • US12266924B2 patent drawing

AI summary

Systems and methods are provided for a battery management system (BMS) having a protection circuit. In one example, a vehicle battery system may include the BMS, the BMS including a cutoff circuit coupled to a short-circuit protection circuit, and a battery pack, wherein the short-circuit protection circuit may include a diode array, cathodes of the diode array being coupled to a positive terminal post of the battery pack and anodes of the diode array being coupled to a negative terminal post of the battery pack. In some examples, the cutoff circuit may further be coupled to a reverse bias protection circuit including a switchable current path arranged between a control input of the cutoff circuit and an output of the cutoff circuit. In this way, the vehicle battery system may be protected from unexpected voltage conditions via the BMS redirecting and dissipating excess current away from the cutoff circuit.