Body Controlled Double Channel Transistor for Static RAM Cell Density
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Solution Overview
Problem
Modern integrated circuits face challenges in reducing the number of transistor elements required for static RAM cells while maintaining high operating speeds and efficiency, as conventional field effect transistors require multiple transistors for storage, leading to space inefficiency and stability issues with self-biasing mechanisms.
Innovation Solution
The introduction of double channel transistors with a body terminal for controlling the body potential, allowing for enhanced trans-conductance and operational stability, which reduces the number of transistors needed in static RAM cells by creating a local maximum in the transfer slope, enabling more efficient circuit configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional field effect transistors are used in static RAM cells, then the basic transistor switching function is achieved, but the number of transistor elements required increases, leading to space inefficiency
Solution Approach 1:
The patent combines multiple functions into a single transistor device by introducing a body terminal that can independently control the body potential. This allows the transistor to perform both switching and self-biasing functions simultaneously, reducing the number of separate transistor elements needed in static RAM cell circuits from conventional multi-transistor configurations to fewer elements while maintaining the same functionality.
Solution Approach 2:
The transistor device is designed with extended functionality by adding the body terminal capability. This single transistor can now serve multiple purposes: standard gate-controlled switching, self-biasing through body potential control, and participation in latch circuits. This multi-functionality eliminates the need for separate dedicated transistors for each function, thereby reducing overall device complexity and chip area.
2Device complexity
If the number of transistors in static RAM cells is reduced, then space efficiency and packing density improve, but operational stability and self-biasing reliability deteriorate
Solution Approach 1:
The body terminal creates a feedback mechanism where the transistor's own operation influences its body potential, which in turn regulates its conductivity. This self-biasing feedback loop ensures stable operation by automatically adjusting the transistor's characteristics based on its operating conditions, maintaining reliability even with reduced transistor counts in the circuit.
Solution Approach 2:
The transistor device serves itself by using its body terminal to automatically establish and maintain the required bias conditions for stable operation. Instead of requiring external biasing circuits or additional transistors to provide stable operating points, the device self-regulates its conductivity through body potential control, ensuring operational stability while minimizing the number of components needed.
3Productivity
If conventional transistor configurations are used, then circuit functionality is achieved, but the packing density and information density are limited
Solution Approach 1:
The patent merges the functions of multiple conventional transistors into a single enhanced transistor device with body terminal control. This consolidation allows static RAM cells to be implemented with fewer transistor elements per cell, directly increasing the number of cells that can be packed into a given chip area and improving both packing density and information density.
Solution Approach 2:
The invention changes the control parameters of the transistor by introducing independent body potential control in addition to gate voltage control. This dual-parameter control enables the transistor to achieve the same circuit functionality with different operating characteristics, allowing for more compact circuit designs that improve packing density while maintaining required functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of electronic circuits with reduced transistor components, enhancing functionality and packing density, and achieving stable self-biasing states in static RAM cells, thereby improving information density and operational stability.
Implementation Method 1
The state of the field effect transistor is controlled by a gate electrode, which may influence, upon application of an appropriate control voltage, the conductivity of a channel region formed between a drain terminal and a source terminal
Implementation Method 2
a body terminal connected to the body region and the body terminal is configured to receive a variable control voltage
Data Source
AI summary
By providing a body controlled double channel transistor, increased functionality in combination with enhanced stability may be accomplished. For instance, flip flop circuits usable for static RAM cells may be formed on the basis of the body controlled double channel transistor, thereby reducing the number of transistors required per cell, which may result in increased information density.