Bolometer Beam Structure for Thermal Insulation and Low Interface Resistance

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Solution Overview

Problem

Bolometer infrared sensors face challenges in achieving high infrared-light receiving sensitivity due to limitations in thermal insulation and thermal noise reduction.

Innovation Solution

The design incorporates a bolometer infrared sensor with a base substrate, a bolometer infrared receiver, and beams made of crystalline semiconductor material that are electrically connected to a resistance change portion, featuring a phononic crystal structure to enhance thermal insulation and reduce interface electric resistance, thereby improving sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the thermal insulation performance of the beams is increased to improve infrared-light receiving sensitivity, then the sensitivity is improved, but the electrical connection between the beams and resistance change portion becomes more difficult to maintain

Engineering Contradiction:
Improveinfrared-light receiving sensitivityVSAvoidelectrical connection stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the material parameters of the beams from amorphous semiconductor to crystalline semiconductor. This parameter change simultaneously achieves two goals: (1) improves thermal insulation performance to enhance infrared-light receiving sensitivity, and (2) maintains low interface electric resistance to ensure stable electrical connection with the resistance change portion

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite material structure where the beams are made of crystalline semiconductor material that is the same base material as the resistance change material. This composite approach ensures both thermal insulation and electrical conductivity requirements are met by selecting materials with appropriate dual properties

Inventive Principle:
Principle #40Composite materials

2Loss of energy

If phononic crystal structure is used to enhance thermal insulation, then thermal insulation performance is improved, but device complexity increases

Engineering Contradiction:
Improvethermal insulation performanceVSAvoidbeam structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies phononic crystal structure to the beams, which is a periodic modulation of the material structure. This parameter change in the beam structure enables selective suppression of thermal phonons while maintaining electrical conduction, achieving improved thermal insulation without requiring completely different structural approaches

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the infrared-light receiving sensitivity by reducing thermal noise and improving thermal insulation, leading to more effective detection of infrared light.

Implementation Method 1

Japanese Unexamined Patent Application Publication No. 2017-223644 (hereinafter referred to as PTL 1) discloses a technique of using a phononic crystal structure to increase the thermal insulation performance of the beams

Methodology Applied
Scientific EffectPhononic crystal structure: Phononic Crystal

Implementation Method 2

The infrared receiver of a bolometer sensor includes a resistance change material the electrical resistance of which changes with temperature

Methodology Applied
Scientific EffectTemperature-dependent resistance change: Thermistor

Implementation Method 3

each of the first beam and the second beam includes a crystalline semiconductor made of a base material the same as a base material of the resistance change material

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11906363B2Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor
Publication Date: 2024.02.20 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
  • US11906363B2 patent drawing
  • US11906363B2 patent drawing
  • US11906363B2 patent drawing

AI summary

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.