Individually-Controllable Bond Chuck Regions for Adhesive Flow Control
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Solution Overview
Problem
Conventional semiconductor bonding processes result in significant total thickness variation (TTV) of adhesive films, leading to increased vertical footprint and warpage of semiconductor devices due to uneven adhesive distribution across the substrate.
Innovation Solution
The use of bond chucks with individually-controllable regions that can be moved and heated independently to control the distribution and flow of adhesive, reducing TTV and mitigating warpage by allowing precise displacement and temperature control of the adhesive.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If adhesive is spun onto the substrate and the semiconductor die is moved toward the substrate, then the adhesive is distributed across the substrate, but the adhesive distribution becomes uneven with significant thickness variation
Solution Approach 1:
The bond chuck is divided into multiple independently controllable regions (first region, second region, third region) that can be moved relative to each other. This segmentation allows different zones of the adhesive to be controlled independently, enabling uniform thickness distribution across the substrate by compensating for lateral displacement variations in different areas.
Solution Approach 2:
The bond chuck regions are made dynamically adjustable, allowing the first, second, and third regions to move relative to one another during the bonding process. This dynamic control enables real-time adjustment of adhesive distribution to achieve uniform thickness, overcoming the static limitations of conventional bonding approaches.
2Area of moving object
If the adhesive is displaced laterally toward peripheral portions of the substrate, then the adhesive spreads across the substrate, but the center portions retain thicker adhesive than peripheral portions
Solution Approach 1:
Different regions of the bond chuck are given different controllable properties, allowing local adjustment of adhesive thickness. The first, second, and third regions can be independently positioned to control adhesive flow and distribution in their respective zones, ensuring uniform thickness across the entire substrate area.
3Productivity
If conventional bonding process is used, then the bonding process is simple and fast, but the total thickness variation increases the vertical footprint of the semiconductor device
Solution Approach 1:
The bond chuck employs dynamic regional control where multiple regions can be independently adjusted during the bonding process. This allows for rapid optimization of adhesive distribution without significantly extending the bonding cycle time, maintaining productivity while reducing vertical footprint through minimized TTV.
4Ease of manufacture
If the adhesive is spun onto the center portion of the substrate, then the adhesive application is simple, but the adhesive thickness varies significantly across the width of the substrate
Solution Approach 1:
The bond chuck is segmented into independently controllable regions that can be adjusted to compensate for the inherent non-uniformity of spin-on adhesive application. This maintains the simplicity of spin-coating while achieving uniform thickness through regional positioning adjustments.
Solution Approach 2:
Different regions of the bond chuck provide localized control over adhesive thickness, allowing the simple spin-on process to produce uniform results by adjusting the position of individual regions to compensate for variations in adhesive distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces TTV to less than 5% of the total adhesive thickness and minimizes warpage by ensuring even adhesive distribution and controlled curing across the substrate.
Implementation Method 1
The first region is heated to a first temperature, the second region is heated to a second temperature, and the third region is heated to a third temperature
Data Source
AI summary
A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.