Bond Pad Layout Using Mutual Inductance for Die Capacitance Compensation
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Solution Overview
Problem
Existing semiconductor dies that use on-die T-coil circuits to compensate for parasitic capacitance inevitably require a larger die area, necessitating an innovative design that can achieve equivalent negative inductance without using on-die T-coil circuits.
Innovation Solution
A semiconductor die with a peculiar bond pad arrangement that leverages mutual inductance between bond wires to realize a bond wire T-coil circuit with equivalent negative inductance, allowing for parasitic capacitance compensation without increasing the die area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If on-die T-coil circuits are used to compensate parasitic capacitance, then parasitic capacitance compensation is achieved, but die area increases
Solution Approach 1:
The invention extracts the T-coil circuit function from the on-die implementation and relocates it to the bond wire level. By using the bond wires themselves to form the T-coil structure through specific bonding patterns, the need for dedicated on-die inductor structures is eliminated, thus achieving parasitic capacitance compensation without occupying additional die area.
Solution Approach 2:
The bond wires serve multiple functions: they provide electrical connection between the die and external pins, and simultaneously function as the inductive elements of the T-coil circuit. This multi-functionality eliminates the need for separate on-die inductor components, achieving compensation while maintaining compact die area.
2Reliability
If bond wire T-coil circuit is implemented, then parasitic capacitance is reduced, but bond pad arrangement complexity increases
Solution Approach 1:
The invention merges the electrical connection function with the T-coil circuit function by having bond wires connect adjacent bond pads. This combining of functions creates the T-coil structure inherently through the bonding process itself, achieving parasitic capacitance reduction while maintaining relatively simple bond pad arrangement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The bond wire T-coil circuit with equivalent negative inductance effectively reduces parasitic capacitance, achieving the necessary compensation without the space requirements of on-die T-coil circuits.
Implementation Method 1
leveraging mutual inductance between bond wires to realize a bond wire T-coil circuit with equivalent negative inductance
Data Source
AI summary
A semiconductor die includes a processing circuit, a first bond pad, and a second bond pad. The first bond pad is electrically connected to a first node of the processing circuit and a first bond wire. The second bond pad is electrically connected to a second node of the processing circuit and a second bond wire. The first bond wire and the second bond wire are magnetically coupled to form a first bond wire T-coil circuit with equivalent negative inductance.