Bond Pad Layout for Bonding Strength Measurement in Semiconductor Elements
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Solution Overview
Problem
Conventional semiconductor elements with back surface irradiation type imaging elements face challenges in measuring the bonding strength of bonding wires due to the positioning of the bonding portion within an opening portion of the semiconductor substrate, making it difficult to perform a shear strength test.
Innovation Solution
A semiconductor element and device design that includes a semiconductor substrate with a wiring region and a bond pad connected to a semiconductor substrate removal region, allowing for the measurement of bonding strength between the bond pad and the bonding wire by creating a region for the shear strength test within the semiconductor substrate removal area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the bonding portion of the bonding wire is disposed in the opening portion of the semiconductor substrate, then the wire bonding can be performed from the back surface side, but the bonding strength cannot be measured because the bonding portion is inaccessible to the measuring instrument
Solution Approach 1:
The semiconductor substrate is divided into a bonding region with an opening portion and a measurement region without substrate removal. The bond pad is positioned at the boundary between these regions, allowing the bonding portion to be accessible through the opening while the measurement portion remains on the substrate surface for instrument access.
Solution Approach 2:
The bond pad serves as an intermediary element that connects the wiring region to the external circuit. It is strategically positioned at the boundary between the opening portion and the region where the semiconductor substrate is removed, enabling both wire bonding through the opening and bonding strength measurement on the substrate surface.
2Length of moving object
If the bond pad is disposed close to the scribe line to shorten the bonding wire length, then the bonding wire length is reduced, but the bonding strength measurement becomes difficult due to limited space near the scribe line
Solution Approach 1:
The semiconductor substrate is designed with different local characteristics: the bonding region has an opening portion for wire access, while the measurement region maintains the substrate structure for instrument access. The bond pad is positioned at the boundary to utilize both regional advantages.
Solution Approach 2:
The measurement approach transitions from requiring lateral access to the bonding portion to measuring the bond pad on the substrate surface. This dimensional shift allows measurement capability while maintaining short bonding wire length.
Data Source
AI summary
Bonding strength of a connection portion bonded to a semiconductor element is measured. The semiconductor element includes a semiconductor substrate and a bond pad. In the semiconductor substrate, an element is formed, and a wiring region having a wiring for transmitting a signal of the element is disposed adjacent. The bond pad is disposed in the wiring region adjacent to a semiconductor substrate removal region, which is a region where the semiconductor substrate is removed, connected to the wiring, and bonded with a connection portion for connection to an outside. The semiconductor substrate removal region includes a region for measuring bonding strength of the bond pad and the connection portion.