Bond Wire Failure Detection via Resistance Comparison
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Solution Overview
Problem
Existing methods for detecting bond wire failures in power converters are inefficient and difficult to implement, particularly in power semiconductor modules where bond wires can rupture or lift off due to temperature variations, leading to heat dissipation and potential system failures.
Innovation Solution
A control method that determines bond wire failures by measuring the resistance of bond wire sets associated with semiconductor devices on a power semiconductor module, comparing the resistances of corresponding bond wire sets in parallel bridge circuits, and ceasing operation if the difference exceeds a threshold, using techniques such as voltage drop measurement during AC cycles or applying a test current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional techniques (Vice variation detection, parasitic gate capacitance detection) are used to detect bond wire failures, then bond wire failures can be predicted, but the detection process becomes inefficient and difficult to implement
Solution Approach 1:
The patent extracts the bond wire resistance measurement function from complex indirect detection methods (Vice variation, parasitic capacitance) and implements it as a direct resistance measurement. By isolating the resistance measurement function and implementing it separately through dedicated test circuits, the system achieves simpler implementation while maintaining detection accuracy. The resistance measurement is performed independently of the main power switching operations.
Solution Approach 2:
The patent introduces test current as an intermediary element to indirectly measure bond wire resistance without requiring direct physical access to the bond wires. By injecting test current through the semiconductor device and measuring the resulting voltage drop, the system can detect bond wire resistance changes that indicate failure, simplifying the detection mechanism while maintaining reliability.
2Power
If bond wires are used to couple switching elements and antiparallel diodes in parallel bridge circuits, then output power capability is increased, but bond wires become vulnerable to rupture and lift-off due to temperature variations
Solution Approach 1:
The patent implements preliminary detection of bond wire resistance changes before actual failure occurs. By continuously monitoring bond wire resistance during operation and comparing it against threshold values, the system can detect early signs of bond wire degradation (such as increased resistance due to partial lift-off) and take preventive action, such as shutting down the affected bridge circuit, before complete failure occurs.
Solution Approach 2:
The patent establishes a feedback mechanism where bond wire resistance measurements are continuously taken and fed back to the control system. The control system compares the measured resistance against predetermined thresholds and automatically adjusts operation or shuts down affected circuits when failure conditions are detected. This closed-loop feedback enables real-time monitoring and preventive protection of bond wires.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively detects bond wire failures, preventing further damage and ensuring the reliable operation of power converters by identifying and responding to resistance differences within predetermined thresholds.
Implementation Method 1
obtaining data indicative of a first resistance of a first bond wire set associated with a first semiconductor device
Implementation Method 2
measuring the resistance of bond wire sets associated with semiconductor devices on a power semiconductor module, comparing the resistances
Data Source
AI summary
Systems and methods of determining bond wire failures are provided. In particular, data indicative of a first resistance of a first bond wire set associated with a first semiconductor device on a power semiconductor module can be obtained. In addition, data indicative of a second resistance of a second bond wire set associated with a second semiconductor device on the power semiconductor module can be obtained. A bond wire failure can then be determined in the first bond wire set or the second bond wire set based at least in part on the data indicative of the first resistance of the first bond wire set and the data indicative of the second resistance of the second bond wire set.