Bonded Active Pattern Structure for Thin Semiconductor Wafers
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Solution Overview
Problem
Current semiconductor device bonding processes face challenges in reducing the thickness of wafers effectively while maintaining improved electrical characteristics and increasing mass production efficiency.
Innovation Solution
The method involves forming sacrificial and active patterns on a second substrate using epitaxial growth, oxidizing the sacrificial patterns, and bonding a second bonding layer onto a first bonding layer, followed by removing the second substrate to expose the active patterns, which allows for the formation of a semiconductor device with enhanced electrical characteristics and improved production efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the second wafer is partially removed to reduce thickness, then wafer thickness is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming sacrificial patterns and active patterns on the second substrate before bonding occurs. The sacrificial patterns are pre-formed to define where material should be removed later, and the active patterns are pre-positioned to ensure correct alignment. This preliminary structuring simplifies the subsequent thickness reduction process by providing clear guides for selective removal, thereby reducing manufacturing complexity while achieving the desired thinning.
Solution Approach 2:
The patent uses sacrificial patterns as intermediary elements that facilitate the thickness reduction process. These sacrificial patterns are temporarily introduced to enable selective removal of the second substrate in specific regions. After bonding and subsequent processing steps, the sacrificial patterns are removed, having served their mediating function in achieving the desired wafer thinning without requiring complex direct removal techniques.
2Quantity of substance
If bonding processes are used to bond multiple wafers, then integration density increases, but process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the bonding structure into distinct functional layers: first substrate, first bonding layer, second substrate with sacrificial patterns, second bonding layer, and active patterns. This segmentation allows each layer to be independently processed and optimized. The sacrificial patterns are segmented into specific regions that will be selectively removed, enabling controlled thinning while maintaining the integrity of the bonded structure, thus managing process complexity despite high integration density.
Solution Approach 2:
The patent implements local quality by applying different properties to different regions of the second substrate. The sacrificial patterns have different removal characteristics compared to the active patterns, allowing selective removal in specific locations. This local differentiation enables precise control over which areas are thinned while maintaining structural integrity in other areas, facilitating high integration density without overwhelming process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor devices with improved electrical characteristics and increased mass production efficiency by effectively reducing wafer thickness and optimizing the structure for better performance.
Implementation Method 1
oxidizing the preliminary sacrificial pattern
Implementation Method 2
forming a preliminary sacrificial pattern and the active pattern on the second substrate using a first epitaxial growth process
Data Source
AI summary
Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.