Bonded Die Structure With Columnar Buffer Layers for Heat and Warpage
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Solution Overview
Problem
The semiconductor industry faces challenges in integrating smaller electronic devices with efficient packaging techniques that address thermal management and warpage issues, which affect yield and performance of integrated circuit packages.
Innovation Solution
The use of buffer layers with columnar crystalline structures for improved thermal conductivity, combined with heat dissipation layers that counteract compressive strain to reduce warpage, enhances the thermal pathway and structural integrity of die structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If buffer layers with columnar crystalline structures are used to improve thermal conductivity, then thermal management is improved, but device complexity increases
Solution Approach 1:
The patent applies parameter changes by controlling the crystalline structure of buffer layers to have a columnar arrangement, which fundamentally changes the thermal conduction properties of the material. This structural parameter modification enables enhanced thermal conductivity without requiring additional active cooling components, thus improving thermal management while limiting complexity growth.
Solution Approach 2:
The patent employs composite material strategies by integrating buffer layers with specific columnar crystalline structures into the semiconductor device architecture. These specialized buffer layers act as thermal management components within the composite device structure, providing improved heat dissipation pathways while maintaining overall device integration.
2Stability of the object's composition
If heat dissipation layers are added to reduce warpage, then structural integrity is improved, but device complexity increases
Solution Approach 1:
The patent addresses warpage by incorporating heat dissipation layers that compensate for differential thermal expansion coefficients between various device components. These layers are strategically designed to counteract compressive strain and prevent warpage during thermal cycling, thereby maintaining structural integrity through thermal management rather than mechanical reinforcement.
3Productivity
If minimum feature size is reduced to increase integration density, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor structure into distinct functional layers including buffer layers with columnar crystalline structures and heat dissipation layers. This segmentation allows each layer to be optimized independently for its specific function while maintaining overall manufacturing feasibility, enabling high integration density without proportionally increasing precision requirements across the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the thermal management and reduces warpage, leading to increased yield and performance of integrated circuit packages by facilitating efficient heat dissipation and maintaining structural integrity.
Implementation Method 1
The buffer layers are formed of a material having a columnar crystalline structure, which may increase the thermal conductivity of the buffer layers. The thermal pathway for conducting heat out of the die structure may thus be improved.
Implementation Method 2
The heat dissipation layer may help reduce warpage of the die structure. Reducing the warpage of the die structure may improve the yield and/or performance of an integrated circuit package in which the die structure is subsequently packaged.
Data Source
AI summary
In an embodiment, a device includes: a lower integrated circuit die; an upper integrated circuit die bonded to the lower integrated circuit die with a dielectric-to-dielectric bonding region and with a metal-to-metal bonding region; a first buffer layer around the upper integrated circuit die, the first buffer layer including a buffer material having a first thermal conductivity, the buffer material having a columnar crystalline structure, the columnar crystalline structure including crystalline columns having a substantially uniform orientation in a direction that extends away from the lower integrated circuit die; and a gap-fill dielectric over the first buffer layer and around the upper integrated circuit die, the gap-fill dielectric having a second thermal conductivity, the first thermal conductivity greater than the second thermal conductivity.