Direct Bonded Die Frame Structure for Warpage Control
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Solution Overview
Problem
Current methods for forming bonded structures in microelectronic elements often rely on adhesives, which result in weak connections and are prone to reversal, whereas direct hybrid bonding without adhesives aims to create strong chemical bonds between non-conductive and conductive features, but faces challenges in achieving uniform stress distribution and preventing warpage in stacked structures.
Innovation Solution
The implementation of direct hybrid bonding techniques that involve preparing non-conductive and conductive bonding layers on microelectronic elements for direct contact, forming covalent bonds without adhesives, and using frame structures with matched coefficients of thermal expansion to mitigate warpage and ensure uniform stress distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If adhesives are used to bond microelectronic elements, then the bonding process is simpler, but the connection strength is weak and prone to reversal
Solution Approach 1:
The patent removes adhesives from the bonding process entirely, extracting the problematic intermediate material that caused weak connections. Direct hybrid bonding is implemented where conductive and non-conductive features are bonded directly to each other without adhesive layers, eliminating the source of connection weakness and reversibility issues.
Solution Approach 2:
The patent introduces direct chemical bonding as an intermediary mechanism between conductive and non-conductive features. Instead of using physical adhesives, covalent bonds are formed directly at the interface between bonding surfaces, creating a strong chemical connection that eliminates the need for separate adhesive materials.
2Strength
If direct hybrid bonding is used to create strong chemical bonds, then connection strength is improved, but warpage and non-uniform stress distribution occur
Solution Approach 1:
The patent applies local quality by creating frame structures with specific material compositions and geometries at strategic locations. These frame structures have different properties than the surrounding substrate, providing localized stress management and warpage compensation in critical areas while maintaining direct hybrid bonding elsewhere.
Solution Approach 2:
The patent changes material parameters by selecting frame structure materials with matched coefficients of thermal expansion (CTE) to the substrate. This CTE matching parameter adjustment prevents differential thermal expansion during processing, thereby reducing warpage and stress non-uniformity while maintaining the strength benefits of direct hybrid bonding.
3Stability of the object's composition
If frame structures with matched CTE are used to prevent warpage, then structural stability is improved, but device complexity increases
Solution Approach 1:
The patent segments the substrate into functional regions: active bonding areas for direct hybrid bonding and frame structure areas for stress management. This segmentation allows the frame structures to be integrated into the substrate design without interfering with the bonding process, maintaining structural stability while minimizing overall device complexity.
Solution Approach 2:
The frame structures serve multiple functions simultaneously: they provide mechanical support, compensate for thermal expansion, and define bonding areas. This multi-functionality reduces the need for separate components, thereby improving structural stability without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of strong, stable bonded structures with reduced warpage and improved thermal management, enhancing the reliability and integrity of microelectronic assemblies by creating uniform stress distribution and preventing defects.
Implementation Method 1
forming covalent bonds without adhesives
Implementation Method 2
frame structures with matched coefficients of thermal expansion to mitigate warpage
Data Source
AI summary
A bonded structure is disclosed. The bonded structure can include a carrier including a surface having a first region and a second region, an integrated device die directly bonded to the first region of the carrier, and a frame structure that is disposed on the second region. The frame structure can be a continuous frame structure. The frame structure can have a first elongate frame element and a second elongate frame element that are positioned between the integrated device die and the second section. At least a portion of the second region between the first frame element and the second frame element can be free from the frame structure.