Bonded IC Structure With Backside Thermal Paths for Dense Chips
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Solution Overview
Problem
As semiconductor technology nodes shrink, increased transistor density leads to higher operating temperatures due to reduced chip area for thermal dissipation, necessitating effective heat dissipation methods.
Innovation Solution
Incorporating thermal conductive paths, including dummy features in the interconnect structure on both the front-side and backside of the semiconductor chip, to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased by reducing minimum feature size, then integration density is improved, but operating temperature increases due to reduced thermal dissipation area
Solution Approach 1:
The patent introduces thermal management features on the backside of the semiconductor chip, utilizing the third dimension (depth/thickness) to create thermal dissipation pathways. By forming thermal vias and heat sink structures on the opposite side from the heat-generating transistors, the invention extends thermal management into the vertical dimension, allowing heat to escape through a different spatial pathway without increasing the planar chip area.
Solution Approach 2:
The patent employs intermediate thermal management structures including thermal via layers, heat sink layers, and bonding layers that act as mediators between the heat-generating transistor structures and the external environment. These intermediate layers facilitate heat transfer through the chip substrate, providing a controlled thermal pathway that connects the heat source to heat dissipation structures without requiring direct contact with the external environment.
2Temperature
If thermal management structures are added to the chip, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The patent integrates thermal management functions into existing chip structures by making the backside of the substrate serve dual purposes: as a mechanical support surface and as a platform for thermal dissipation structures. The bonding layers and heat sink structures on the backside perform both structural bonding functions and thermal conduction functions, eliminating the need for separate dedicated thermal management components.
Solution Approach 2:
The patent combines multiple thermal management functions into integrated structures. For example, the heat sink layer is merged with bonding layers to create a unified structure that simultaneously provides thermal conduction, mechanical bonding, and structural support. The thermal via structures are integrated into the existing interconnect architecture, merging thermal management with the chip's electrical interconnect system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for improved thermal management and reduced operating temperatures by providing efficient heat dissipation pathways from heat-generating components to the chip exterior.
Implementation Method 1
thermal conductive paths, including dummy features in the interconnect structure on both the front-side and backside of the semiconductor chip, to enhance heat dissipation
Data Source
AI summary
A method includes forming a transistor over a front side of a substrate; forming a front-side interconnect structure over the transistor, the front-side interconnect structure comprising layers of conductive lines, and conductive vias interconnecting the layers of conductive lines; forming a first bonding layer over the front-side interconnect structure; forming a second bonding layer over a carrier substrate; bonding the front-side interconnect structure to the carrier substrate by pressing the first bonding layer against the second bonding layer; and forming a backside interconnect structure over a backside of the substrate after bonding the front-side interconnect structure to the carrier substrate.