Bonded Memory Structure With Heat Dissipation Channels
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Solution Overview
Problem
High integration levels in semiconductor memories lead to severe heat dissipation issues, with current hybrid bonding techniques requiring high temperatures that can damage circuit devices, necessitating effective heat dissipation methods to ensure stability.
Innovation Solution
Incorporating heat dissipation channels spaced apart from conductive pillars within dielectric layers in semiconductor structures, allowing for timely and effective heat dissipation during bonding and operation, thereby reducing damage from high temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high integration level is achieved in semiconductor memories, then bit density is improved, but heat dissipation becomes more severe
Solution Approach 1:
The patent introduces heat dissipation channels that segment the dielectric layer into multiple regions, creating dedicated pathways for heat flow. These channels divide the heat dissipation function from the storage function, allowing heat to be efficiently removed while maintaining high bit density in the memory structures.
Solution Approach 2:
The heat dissipation channels act as intermediary structures between the high-density memory cells and the heat sink. These channels provide a dedicated thermal conduction path that mediates the heat transfer process, enabling effective heat removal without interfering with the electrical functionality of the high-integration memory array.
2Strength
If high temperature bonding is used for hybrid bonding, then bonding strength is improved, but circuit devices are damaged
Solution Approach 1:
The patent extracts the heat dissipation function from the bulk dielectric material by introducing dedicated heat dissipation channels. This separation allows the bonding process to proceed at high temperatures for strong bonding while the extracted heat dissipation pathways prevent excessive heat accumulation that would damage circuit devices.
Solution Approach 2:
The heat dissipation channels are formed in the dielectric layer before the hybrid bonding process. This preliminary action ensures that the thermal pathways are already in place to handle the heat generated during high-temperature bonding, preventing circuit damage before it can occur.
3Temperature
If heat dissipation channels are introduced in dielectric layers, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The heat dissipation channels are designed to serve multiple functions: they provide thermal conduction pathways, act as etch stop layers during fabrication, and can be integrated with existing memory cell structures. This multi-functionality reduces the overall device complexity by combining several functions into a single structural element.
Solution Approach 2:
The heat dissipation channels create a controlled porous or channelled structure within the dielectric layer. This porous architecture provides efficient heat dissipation while maintaining the mechanical integrity of the dielectric layer and allowing for standard fabrication processes to be used.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces damage to circuit devices by facilitating heat dissipation, ensuring the stability and performance of high-integration semiconductor memories.
Implementation Method 1
a heat dissipation channel located in at least one of the first dielectric layer or the second dielectric layer, wherein the heat dissipation channel is disposed as being spaced apart from at least one of the first conductive pillar or the second conductive pillar
Data Source
AI summary
Examples of the present disclosure disclose a memory and a fabrication method thereof, a memory system, and an electronic device. The memory includes a first semiconductor structure and a second semiconductor structure that are bonded to each other; the first semiconductor structure includes a first dielectric layer and a first conductive pillar located in the first dielectric layer; the second semiconductor structure includes a second dielectric layer and a second conductive pillar located in the second dielectric layer; the second conductive pillar is connected with the first conductive pillar; the memory further includes a heat dissipation channel located in at least one of the first dielectric layer or the second dielectric layer, wherein the heat dissipation channel is disposed as being spaced apart from at least one of the first conductive pillar or the second conductive pillar.