Bonded Assembly with Polymer Spacing and Oxidation Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor bonding technologies face challenges in achieving strong and reliable bonding between semiconductor dies with minimal interfacial resistance, particularly in three-dimensional memory devices where precise alignment and low resistance are crucial for efficient data transfer.
Innovation Solution
The method involves forming bonding pads on semiconductor dies with a stack of silicon-containing dielectric layers and polymer materials, including a proximal and distal polymer layer with enhanced hydrophilicity or cross-linking density, and using carbon-based oxidation barrier layers to reduce oxidation and improve bonding strength, along with self-assembly materials for enhanced adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used to bond semiconductor dies, then bonding can be achieved, but interfacial resistance is high and bonding strength is insufficient
Solution Approach 1:
The patent applies preliminary action by forming carbon-based oxidation barrier layers on the bonding pads before bonding occurs. This pre-treatment prevents oxidation and creates a surface optimized for bonding, resulting in lower interfacial resistance and stronger bonds without requiring additional steps during the bonding process itself.
Solution Approach 2:
The patent introduces carbon-based oxidation barrier layers as intermediary materials between the bonding pads of different semiconductor dies. These intermediary layers mediate the bonding interface by preventing direct metal-to-metal contact that would cause oxidation, thereby reducing interfacial resistance while maintaining bonding strength.
2Strength
If polymer materials are used in pad-level dielectric layers, then adhesion and bonding strength are improved, but oxidation of bonding pads occurs
Solution Approach 1:
The patent segments the pad-level dielectric structure into multiple functional layers: a carbon-based oxidation barrier layer directly contacting the bonding pad, and polymer material layers positioned above the barrier layer. This segmentation allows each layer to perform its specific function - the barrier layer prevents oxidation while the polymer layers provide adhesion and mechanical support.
Solution Approach 2:
The carbon-based oxidation barrier layer serves as an intermediary between the bonding pad and the polymer material layers. It mediates by blocking oxygen from reaching the bonding pad while allowing the polymer layers to maintain their adhesion and structural functions without causing oxidation.
3Reliability
If multiple layers are added to bonding pads to reduce oxidation and improve bonding, then bonding strength increases, but manufacturing complexity increases
Solution Approach 1:
The patent merges the oxidation protection function and the dielectric function into an integrated multi-layer structure. The carbon-based barrier layer and polymer material layers are formed as a unified pad-level dielectric assembly, where each layer serves multiple purposes - the barrier layer provides both oxidation protection and serves as a base for polymer adhesion, reducing the need for separate protective layers.
Solution Approach 2:
The carbon-based oxidation barrier layer provides self-service by automatically preventing oxidation of the bonding pad through its inherent chemical properties. This self-protecting characteristic eliminates the need for additional active protection mechanisms or complex processing steps to prevent oxidation during subsequent manufacturing operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in strong, low-resistance bonds between semiconductor dies, improving the performance and reliability of three-dimensional memory devices by reducing interfacial resistance and enhancing bonding strength.
Implementation Method 1
forming carbon-based oxidation barrier layers to reduce oxidation and improve bonding strength
Implementation Method 2
a proximal and distal polymer layer with enhanced hydrophilicity or cross-linking density
Implementation Method 3
along with self-assembly materials for enhanced adhesion
Data Source
AI summary
A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first metallic plates. First bonding pads including a respective one of the first metallic plates are formed. A first polymer material layer can be formed over the first bonding pads. A second semiconductor die including second bonding pads is bonded to the first bonding pads to form a bonded assembly.