Bonded Semiconductor Structure to Block Charge-Induced RF Loss
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Solution Overview
Problem
Conventional semiconductor devices using a monocrystalline silicon substrate bonded with a silicon oxide layer experience charge accumulation, leading to the formation of an undesired conductive channel, which affects the performance of resonators and filters by causing radio frequency loss.
Innovation Solution
A semiconductor device is designed with a charge accumulation preventing layer, such as polysilicon, amorphous silicon, silicon nitride, or gallium nitride, placed between the carrier substrate and the dielectric layer to prevent charge accumulation and eliminate the conductive channel, using materials like polysilicon, amorphous silicon, silicon nitride, or gallium nitride that do not include silicon oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide layer is used as a bonding layer between monocrystalline silicon substrate and semiconductor structure, then bonding is achieved, but charge accumulation occurs at the contact interface generating an undesired conductive channel
Solution Approach 1:
The patent introduces a charge accumulation preventing layer as an intermediary between the monocrystalline silicon substrate and the silicon oxide bonding layer. This intermediate layer prevents direct contact between the silicon substrate and silicon oxide, thereby blocking the charge accumulation mechanism while maintaining the bonding function through the silicon oxide layer.
Solution Approach 2:
The bonding interface is segmented into multiple distinct layers: the monocrystalline silicon substrate, the charge accumulation preventing layer, and the silicon oxide bonding layer. This segmentation separates the bonding function (performed by silicon oxide) from the charge accumulation problem (eliminated by the intermediate layer), allowing each layer to perform its specific function independently.
2Strength
If silicon oxide is used as bonding layer, then bonding strength is provided, but radio frequency loss occurs in resonators and filters due to conductive channel
Solution Approach 1:
The charge accumulation preventing layer serves as a mediator that preserves the bonding strength provided by the silicon oxide layer while eliminating the radio frequency loss caused by charge accumulation. The intermediary layer allows the silicon oxide to maintain its bonding function without causing the harmful conductive channel effect.
Solution Approach 2:
The patent applies a specific material property (non-silicon-oxide composition) locally at the critical interface region where charge accumulation occurs. The charge accumulation preventing layer has distinct local quality characteristics that differ from both the silicon substrate and the silicon oxide bonding layer, specifically designed to prevent charge accumulation while allowing bonding to proceed.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device incudes: a first sub-semiconductor structure including a dielectric layer; and a second sub-semiconductor structure, at least including a carrier substrate, and being bonded to the first sub-semiconductor structure. The first sub-semiconductor structure or the second sub-semiconductor structure includes a charge accumulation preventing layer, and the charge accumulation preventing layer is disposed between the carrier substrate and the dielectric layer, and is configured to avoid an undesired conductive channel from being generated due to charge accumulation on a surface of the carrier substrate.