Bonded Substrate Capacitor Layout to Reduce Bonding Stress
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Solution Overview
Problem
The performance of capacitors in semiconductor devices deteriorates due to stress applied during the bonding process and thermal expansion differences, leading to issues like insulating film cracks and variations in polarization.
Innovation Solution
The semiconductor device is designed with first and second capacitors positioned away from the bonding surface, using electrodes made of materials that minimize copper diffusion and allowing for a noise-cutting and storage function, thereby reducing stress on the capacitors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the capacitor is positioned close to the bonding surface with large contact area between insulating film and metal wiring, then the bonding process is simplified, but stress is directly applied to the capacitor causing insulating film cracks and performance deterioration
Solution Approach 1:
The patent positions the capacitor away from the bonding surface in the vertical dimension (depth direction), transforming the capacitor's location from a two-dimensional surface proximity to a three-dimensional depth-separated position. This spatial reconfiguration reduces stress application while maintaining manufacturing feasibility.
Solution Approach 2:
The patent introduces an insulating film as an intermediary layer between the metal wiring and the capacitor. This intermediary structure prevents direct contact and stress transmission to the capacitor, while still allowing electrical connection through the insulating film.
2Reliability
If copper-containing metal wiring is used for electrical connection, then conductivity is improved, but copper diffusion into the insulating film occurs causing capacitor performance deterioration
Solution Approach 1:
The insulating film serves as an intermediary barrier between the copper-containing metal wiring and the capacitor structure. This intermediary layer prevents copper atoms from diffusing into the capacitor while maintaining electrical conductivity through the insulating film's properties.
Solution Approach 2:
The patent uses composite material structures where the insulating film is positioned between the copper wiring and capacitor, creating a multi-material system that combines the high conductivity of copper with the diffusion-blocking properties of the insulating film material.
3Device complexity
If the capacitor structure is simplified with direct contact between metal wiring and insulating film, then manufacturing complexity is reduced, but stress from bonding process and thermal expansion causes insulating film cracks
Solution Approach 1:
The insulating film acts as a stress-distributing intermediary between the metal wiring and the capacitor plates. This intermediary layer absorbs and distributes mechanical stress from bonding processes and thermal expansion, preventing crack formation in the insulating film.
Solution Approach 2:
The patent changes the physical parameters of the capacitor structure by positioning it away from the bonding surface and adjusting the contact area between the insulating film and metal wiring. These parameter changes reduce stress concentration while maintaining electrical functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes capacitor performance deterioration, reduces copper diffusion, and enhances capacitor characteristics while maintaining a smaller device size and improving yield, enabling effective noise removal and charge storage.
Implementation Method 1
a first electrode which is provided in the first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and the second substrate, a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as the bonding surface and bonded to one surface of the first electrode
Implementation Method 2
at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to the other surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to the other surface of the second electrode
Data Source
AI summary
There is provided a semiconductor device that can minimize deterioration of performance of a capacitor due to a bonding process. Between a first substrate and a second substrate bonded to each other, the semiconductor device includes a first electrode which is provided in the first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and the second substrate, and a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as a bonding surface and bonded to one surface of the first electrode. Therefore, the semiconductor device includes at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to a non-exposed surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to a non-exposed surface of the second electrode.