Compound Semiconductor Bonded Substrate Transfer Without Separation Grooves
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Solution Overview
Problem
Existing techniques for transferring an epitaxial functional layer from a starting substrate to another substrate require separation grooves, limiting design freedom due to constraints such as non-uniform device patterns and narrow groove requirements.
Innovation Solution
A method involving epitaxial growth of a compound semiconductor layer, temporary bonding with a thermosetting resin maintained in a softened state, and final bonding using a silicon oxide or silicon nitride film, allowing for separation without grooves and improved design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet etching is used to separate the temporary support substrate and epitaxial functional layer, then separation can be achieved, but separation grooves are required which constrain design freedom
Solution Approach 1:
The patent extracts the separation function from the epitaxial layer itself by introducing a dedicated separation layer between the temporary support substrate and the epitaxial functional layer. This separation layer is selectively removed to enable substrate separation without requiring grooves in the device patterns, thereby resolving the contradiction between separation capability and design freedom
Solution Approach 2:
The patent introduces a separation layer as an intermediary element between the temporary support substrate and the epitaxial functional layer. This intermediary layer facilitates selective removal and substrate separation while maintaining complete coverage of the epitaxial layer, eliminating the need for separation grooves and enabling full design freedom for device patterns
2Adaptability or versatility
If separation grooves are made narrow to accommodate non-uniform device patterns, then design flexibility improves, but manufacturing difficulty increases
Solution Approach 1:
The patent extracts the separation function from the device pattern area by placing a dedicated separation layer in the spaces between devices. This allows narrow or complex device patterns to be manufactured without the additional complexity of forming precise separation grooves, thereby improving both design flexibility and ease of manufacture
Solution Approach 2:
The separation layer acts as an intermediary that enables substrate release without requiring groove formation in narrow or complex pattern areas. The layer can be selectively removed through chemical etching or other methods, providing manufacturing simplicity even when device patterns are non-uniform or closely spaced
3Strength
If high temperature processing is used to form silicon oxide film, then bonding strength improves, but the thermosetting resin cures and becomes difficult to release
Solution Approach 1:
The patent applies preliminary action by forming the silicon oxide film on the temporary support substrate before bonding the epitaxial functional layer. This allows the oxide film to be formed with controlled thickness and properties, enabling subsequent release through selective removal of the oxide film without requiring high temperature processing that would cure the thermosetting resin
Solution Approach 2:
The patent applies parameter changes by controlling the thickness and formation conditions of the silicon oxide film to enable selective removal. By adjusting the oxide film parameters (thickness, formation temperature, composition), the patent achieves sufficient bonding strength while maintaining the ability to release the substrate through selective etching or other low-temperature removal methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the transfer of epitaxial layers without separation grooves, enhancing design freedom and reducing costs and complexity in device systems by facilitating easy release and stable bonding.
Implementation Method 1
the thermosetting resin being maintained in a softened state without being cured
Implementation Method 2
epitaxially growing a compound semiconductor functional layer on a starting substrate
Implementation Method 3
the final bonding in step (4) is performed via a silicon oxide film or a silicon nitride film
Data Source
AI summary
The present invention relates to a method of manufacturing a compound semiconductor bonded substrate comprising the steps of:(1) epitaxially growing a compound semiconductor functional layer on a starting substrate;(2) temporarily bonding a support substrate to the epitaxially grown surface to form a first compound semiconductor bonded substrate;(3) removing the starting substrate from the first compound semiconductor bonded substrate to form a second compound semiconductor bonded substrate;(4) finally bonding a surface of the second compound semiconductor bonded substrate from which the starting substrate has been removed to a permanent substrate to form a third compound semiconductor bonded substrate;(5) removing the support substrate from the third compound semiconductor bonded substrate to form a fourth compound semiconductor bonded substrate, whereinthe temporary bonding is performed via a thermosetting resin, the thermosetting resin being maintained in a softened state without being cured, andthe final bonding is performed via a silicon oxide film or a silicon nitride film.Thus, provided is a method of manufacturing a compound semiconductor bonded substrate having an improved degree of freedom in designing a device or a device system.