Bonded Wafer Edge Metrology for Centricity Offset Detection
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Solution Overview
Problem
Bonded wafers with improper centricity cause manufacturing issues during CMP processes, leading to undesired edge profiles, device yield impact, and potential equipment damage.
Innovation Solution
A metrology system and method that analyze wafer edge profile images to determine the X and Y offsets between bonded wafers, using image processing techniques and a sinusoidal model to calculate the center positions and displacement of the wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If bonded wafers are used with complex edge profiles and different layer heights, then three-dimensional integrated circuits can be produced, but centricity problems arise that affect CMP process and handling
Solution Approach 1:
The patent performs wafer edge profile analysis and centricity measurement before the CMP process using a metrology system. By detecting and calculating the offset between the bonded wafer center and carrier wafer center in advance, the system enables preliminary correction or adjustment, preventing centricity-related defects during subsequent manufacturing steps.
2Ease of manufacture
If traditional metrology methods are used for bonded wafers, then simple measurements can be performed, but complex edge profiles and varying layer heights cannot be accurately measured
Solution Approach 1:
The patent transforms the measurement approach by analyzing the wafer edge profile shape and applying a sinusoidal model to extract centricity information. Instead of direct physical contact measurement, the system uses optical imaging combined with mathematical modeling, changing the measurement parameters from direct displacement sensing to edge profile characterization.
Solution Approach 2:
The patent replaces traditional mechanical measurement methods with an optical-based metrology system. The system uses imaging to capture wafer edge profiles and employs image processing algorithms to calculate displacement, eliminating the need for complex mechanical probes or contact-based measurement devices.
3Productivity
If improper centricity is not detected, then production continues without interruption, but manufacturing errors occur and equipment damage can happen
Solution Approach 1:
The patent implements a feedback mechanism where the metrology system continuously measures wafer centricity and provides information about offset values. This feedback enables real-time monitoring and detection of improper bonding, allowing operators to correct issues before they cause manufacturing defects or equipment damage, thus maintaining both productivity and reliability.
Data Source
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Figure 3
Figure 4A
AI summary
Wafer edge profile images are analyzed at locations around a bonded wafer, which may have a top wafer and a carrier wafer. An offset curve is generated based on the wafer edge profile images. Displacement of the top wafer to the carrier wafer is determined based on the offset curve. The wafer edge profile images may be generated at multiple locations around the wafer. The wafer edge profile images may be shadowgram images. A system to determine displacement of the top wafer to the carrier wafer can include an imaging system connected with a controller.