Bonded Wafer Plasma Removal of Uncured Bonding Defects
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Solution Overview
Problem
Existing methods fail to effectively detect and remove curing failure portions in bonded wafers containing AlGaInP-based LEDs, leading to delamination and contamination issues during micro LED manufacturing.
Innovation Solution
Introduce the bonded wafer into a plasma atmosphere to selectively break and remove insufficiently cured bonding failure portions using a thermosetting bonding member, such as benzocyclobutene, in a single process without additional detection steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If detection steps are added to identify curing failure portions, then manufacturing precision is improved, but productivity deteriorates
Solution Approach 1:
The patent employs plasma treatment that automatically identifies and removes curing failure portions through selective etching based on differences in plasma reactivity between cured and uncured regions, eliminating the need for separate detection steps and maintaining high productivity
Solution Approach 2:
The patent replaces mechanical or optical detection systems with plasma-based selective removal, where the plasma inherently distinguishes between cured and uncured bonding member regions through chemical reactivity differences, simplifying the process and improving efficiency
2Device complexity
If conventional bonding methods are used without plasma treatment, then process simplicity is maintained, but bonding failure portions cause delamination and contamination
Solution Approach 1:
The patent extracts and removes the harmful bonding failure portions through plasma selective etching, separating the defective regions from the good portions and preventing them from causing delamination and contamination in subsequent processing steps
Solution Approach 2:
The patent uses plasma (a highly reactive oxidizing environment) to selectively attack and remove uncured bonding member material, leveraging the strong oxidizing capability of plasma to differentiate and remove incomplete regions while preserving cured areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances productivity and yield by reliably removing bonding failures in bonded wafers, preventing delamination and contamination, and simplifying the manufacturing process for micro-LEDs.
Implementation Method 1
the bonded wafer is introduced into a plasma atmosphere to remove the bonding failure portion where the thermosetting bonding member is insufficiently cured by selectively breaking
Implementation Method 2
selectively breaking the insufficiently cured bonding failure portion for removal
Data Source
Figure 1~4
AI summary
The present invention is a method for removing a bonding failure portion in a bonded wafer, the method including removing the bonding failure portion in the bonded wafer which includes a light emitting device structure having an active layer made of (AlyGa11-y) xIn1-xP (0.4≤x≤0.6, 0≤y≤0.5), and is bonded to a transparent substrate, which transmits light of emission wavelength, by curing a thermosetting bonding member, in which the bonded wafer is introduced into a plasma atmosphere to remove the bonding failure portion where the thermosetting bonding member is insufficiently cured by selectively breaking. This provides a method for removing a bonding failure portion in a bonded wafer, which can remove a curing failure portion without using methods such as measurement in the bonded wafer in which a light emitting device structure having an AlGaInP-based active layer and a transparent substrate are bonded via a thermosetting bonding member.