Bonded Wafer Stress Prediction for Stacked Packaging Yield
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Solution Overview
Problem
The semiconductor industry faces challenges in managing yield and reliability due to fabrication errors in bonded wafers, particularly issues related to centricity, shape-induced stress changes, and bonding interface stress, which can lead to defects and equipment damage.
Innovation Solution
A method and system for measuring top and bottom wafer shapes, determining shape-changed induced stress, and calculating bonding strength using a processor and a model, such as a hypermodel or machine learning algorithm, to improve bonding parameters and reduce failure risk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If thinning or grinding processes are used to reduce wafer thickness, then the target thickness is achieved, but shape-induced stress changes occur leading to bonding failure and local cracks
Solution Approach 1:
The patent applies preliminary action by measuring wafer shape and calculating shape-induced stress changes before the thinning or grinding process. This allows prediction of bonding strength and identification of high-risk areas before damage occurs, enabling preventive measures to be taken
Solution Approach 2:
The patent implements feedback by using measured wafer shape data and stress calculations to provide information about bonding strength and defect risks. This feedback loop allows process parameters to be adjusted based on predicted outcomes, improving reliability while achieving target thickness
2Volume of moving object
If thinning processes are performed after bonding, then target thickness is achieved, but local cracks and grinding debris enter from the edge damaging devices
Solution Approach 1:
The patent performs preliminary measurement of wafer shape and calculation of stress changes before thinning to identify areas susceptible to cracking. This allows preventive measures to be implemented before cracks propagate or debris enters during the thinning process
Solution Approach 2:
The patent replaces direct mechanical inspection with a computational approach, using shape measurement data and stress modeling to predict bonding strength and defect risks without requiring physical testing that could introduce damage
3Productivity
If bonding pitch is decreased to increase device density, then productivity improves, but delamination becomes more likely at bonding interface due to insufficient stress release space
Solution Approach 1:
The patent uses feedback from shape measurement and stress calculation to provide information about bonding interface stability. This allows process parameters to be optimized for high-density configurations while maintaining reliability by identifying and addressing stress concentration areas
Solution Approach 2:
The patent applies parameter changes by using shape measurement data and stress modeling to determine optimal bonding parameters for high-pitch configurations. This enables adaptation of bonding conditions to maintain reliability as device density increases
4Device complexity
If shape-induced stress is not considered in post-bonding processes, then process simplicity is maintained, but failure risk cannot be reduced
Solution Approach 1:
The patent replaces complex physical testing and trial-and-error approaches with computational stress analysis based on shape measurement data. This provides reliable failure risk assessment without requiring complex experimental setups or iterative testing
Solution Approach 2:
The patent introduces shape measurement and stress calculation as an intermediary between process planning and actual manufacturing. This intermediary step provides critical information about bonding strength and failure risks without requiring direct physical testing of the bonded structure
Data Source
AI summary
Shape-changed induced stress for a target thickness of a bonded wafer can be determined. A bonding strength for the bonded wafer can then be determined using the shape-changed induced stress. Bonding parameters can be determined for the bonding strength. The bonding strength that is determined can be compared with an inline bonding strength for formation of the bonded wafer.


