Bondhead Fluidic Barrier for Semiconductor Vacuum Contamination
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Solution Overview
Problem
The conventional semiconductor bonding process is prone to contamination due to vaporized bonding material entering and condensing in vacuum lines, leading to clogging and reduced vacuum reliability, resulting in unnecessary expenses and manufacturing downtime.
Innovation Solution
The implementation of a bondhead design with a second flow unit and conduit system that creates a positive or negative pressure barrier and fluidic path to prevent vaporized bonding material from entering the vacuum lines, using peripheral fluid flow to inhibit material entry and potentially capturing it with filter units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature bonding process is used to ensure appropriate bonding material viscosity and interconnect formation, then bonding quality is improved, but vaporized bonding material contaminates vacuum lines causing clogging and reliability degradation
Solution Approach 1:
A second fluid (intermediary substance) is introduced through a second opening to act as a barrier between the vaporized bonding material and the vacuum line. This intermediary fluid prevents the harmful vaporized material from entering and contaminating the vacuum system while allowing the high-temperature bonding process to continue effectively.
Solution Approach 2:
The bondhead is divided into multiple functional zones with separate openings: a first opening for vacuum withdrawal and a second opening for introducing the protective fluid. This segmentation allows independent control of vacuum function and contamination prevention function, enabling the system to maintain both bonding quality and vacuum line cleanliness.
2Manufacturing precision
If bonding temperature is increased to ensure appropriate bonding material viscosity, then bonding process quality is improved, but more bonding material vaporizes and enters vacuum lines
Solution Approach 1:
The second fluid acts as a barrier intermediary that prevents vaporized bonding material from migrating into the vacuum line. This allows the bonding process to operate at higher temperatures for better quality without suffering from material loss through vaporization and contamination.
Solution Approach 2:
The vaporized bonding material, which would normally be a harmful contaminant, is redirected by the fluid barrier to condense in a controlled area away from the vacuum line. The harmful vaporization effect is converted into a manageable condensation process that does not compromise vacuum system integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively mitigates the contamination of vacuum lines by vaporized bonding material, maintaining vacuum reliability and reducing maintenance costs and downtime by preventing clogging and ensuring consistent semiconductor device handling.
Implementation Method 1
The first flow unit is configured to withdraw the first fluid at the first pressure through the first opening
Implementation Method 2
directs the second fluid to or withdraws the second fluid from the second opening at a second pressure that is different from the first pressure to prevent vaporized bonding material from entering the first opening
Implementation Method 3
The vaporized bonding material cools as it travels through the vacuum line 13 and condenses onto the vacuum lines 13 and/or hardware that is drawing the vacuum 11 itself
Implementation Method 4
The bonding process described herein is typically performed at high temperatures to ensure the bonding material 18 has an appropriate viscosity, interconnects are formed
Implementation Method 5
some of the bonding material 18 tends to vaporize at the higher temperatures
Data Source
AI summary
Methods and systems for inhibiting bonding materials from entering a vacuum system of a semiconductor processing tool are disclosed herein. A semiconductor processing tool configured in accordance with a particular embodiment includes a bondhead having a first port, a second port, a first channel fluidly coupled to the first port, and a second channel fluidly coupled to the second port. The first port and first channel together comprise a first opening extending through the bondhead, and the second port and second channel together comprise a second opening extending through the bondhead. The second opening at least partially surrounds the first opening. A first flow unit is coupled to the first port and is configured to withdraw air from the first opening. A second flow unit is coupled to the second port and is configured to provide fluid to or withdraw fluid from the second opening.