Substrate Bonding Chuck Pressure Control for Scale Distortion
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Solution Overview
Problem
Existing substrate bonding techniques, such as direct or fusion bonding, often result in scale distortions due to inaccuracies in wafer alignment and temperature differences, leading to reduced bond quality.
Innovation Solution
A bonding device with independent gas pressure regulators and a control unit that adjusts pressure based on substrate properties, including size, stiffness, and temperature, to precisely control the deflection and alignment of substrates during bonding, ensuring minimal scale distortions and optimal bond quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If uniform gas pressure is applied to both substrates, then the bonding process is simple, but scale distortions occur due to wafer property variations
Solution Approach 1:
The patent divides the uniform pressure system into separate pressure control systems for each substrate. The first gas pressure regulator controls pressure to the first substrate independently, while the second gas pressure regulator controls pressure to the second substrate independently. This segmentation allows differential pressure application to compensate for wafer property variations and prevent scale distortions.
Solution Approach 2:
The patent changes the pressure parameter from uniform to differential by allowing different gas pressures to be applied to different substrates. The control unit adjusts the first and second gas pressures independently based on substrate properties, transforming a single-parameter control system into a multi-parameter control system that can compensate for variations in wafer stiffness, size, and temperature.
2Measurement precision
If gas pressure is used to deflect substrates, then alignment precision is improved, but pressure control complexity increases
Solution Approach 1:
The control unit receives information about substrate properties (stiffness, size, temperature) and uses this feedback to adjust the gas pressure settings. The system measures or detects substrate characteristics and modifies the pressure parameters accordingly, creating a closed-loop control system that achieves precise alignment while adapting to variations in substrate properties.
Solution Approach 2:
The system performs preliminary measurement or assessment of substrate properties before applying gas pressure for alignment. By knowing the stiffness, size, and temperature of each substrate in advance, the control unit can pre-calculate the appropriate pressure values needed to achieve the desired deflection and alignment, preventing the need for complex real-time adjustments during the bonding process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces scale distortions and enhances bond quality by accurately controlling gas pressures and temperatures, ensuring precise alignment and consistent bonding across substrates, even with varying properties.
Implementation Method 1
supplying gas with a first gas pressure to the first pressure port and supplying gas with a second gas pressure to the second pressure port so that the substrates are deflected towards each other
Data Source
AI summary
A bonding device has two chucks, two gas pressure regulators and a control unit. The chucks each have a holding surface with pressure ports fluidically connected to the respective gas pressure regulator. The control unit is electrically and/or wirelessly connected to the gas pressure regulators and configured to control gas pressure regulators independently from each other. Support elements movably mounted within the pressure ports, are provided to measure the amount of substrate deflection and adjust the respective gas pressures and also to apply additional mechanical pressure to the substrates. The two chucks may be mounted on corresponding support structures so as to be thermally isolated therefrom. The temperature of the two chucks may be equalised by moving the chucks into contact. A chuck tempering device may be used for equalising the temperature of the two chucks. The bonding device is used for bonding two substrates by bonding wave propagation.