Semiconductor Chip Bonding Electrodes With Fine Grain and Nanotwin Copper
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Solution Overview
Problem
Semiconductor chip structures with poor bonding reliability during manufacturing can lead to improper performance, as seen in existing bonding methods for first and second semiconductor chips.
Innovation Solution
A semiconductor chip structure design that includes hybrid-bonding of first and second semiconductor chips using a bonding interface comprising fine grain copper and nanotwin copper, with planar bonding surfaces to enhance bonding reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used to bond semiconductor chips, then the manufacturing process is simple, but the bonding reliability is insufficient
Solution Approach 1:
The bonding electrode uses a composite structure combining fine grain copper (grain size 1 μm or less) and nanotwin copper, creating a multi-phase material system that leverages the high ductility of fine grain copper and the high strength of nanotwin copper to achieve superior bonding reliability
Solution Approach 2:
The bonding electrode exhibits non-uniform microstructure with different regions having different properties: fine grain copper is distributed in specific areas to provide ductility and bonding capability, while nanotwin copper forms in other regions to provide strength, creating local quality variations that optimize both bonding reliability and mechanical properties
2Reliability
If hybrid bonding technique with fine grain copper and nanotwin copper is used, then bonding reliability is enhanced, but the manufacturing complexity increases
Solution Approach 1:
The manufacturing process controls copper grain structure by changing physical parameters during fabrication, specifically controlling grain size to 1 μm or less and creating nanotwin structures through controlled processing conditions, thereby achieving the desired microstructure through parameter optimization rather than complex additional steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid-bonding approach increases the bonding reliability between semiconductor chips, ensuring proper functionality by maximizing interdiffusion of copper at the bonding interface.
Implementation Method 1
The first bonding insulation layer and the first bonding electrode of the first bonding wiring layer are respectively hybrid-bonded to the second bonding insulation layer and the second bonding electrode of the second bonding wiring layer
Data Source
Figure 1
Figure 2
Figure 3A
AI summary
A semiconductor chip structure includes a plurality of semiconductor chips. A bonding electrode included in each of the semiconductor chips is filled with nanotwin copper and fine grain copper is disposed in at least a portion of the bonding electrode.