Semiconductor Chip Bonding Head with Differential Thermal Conductivity

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Solution Overview

Problem

Existing semiconductor chip bonding apparatuses face challenges in achieving uniform temperature distribution during the bonding process, leading to non-uniform bonding properties and potential underfill peeling due to temperature differences between the center and corners of the chip.

Innovation Solution

The semiconductor chip bonding apparatus incorporates a head with a central section and peripheral section having different thermal conductivities, ensuring uniform temperature distribution by optimizing the thermal conductivity materials and design to maintain temperatures above the melting point of the underfill across the bonding area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a uniform head structure is used, then the device complexity is reduced, but the temperature distribution becomes non-uniform

Engineering Contradiction:
Improvehead structureVSAvoidtemperature distribution
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The head is divided into a central section and peripheral section with different thermal conductivities. The central section has lower thermal conductivity to maintain higher temperature, while the peripheral section has higher thermal conductivity to distribute heat evenly to corners, resolving the temperature uniformity issue without requiring complete structural redesign

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The head uses composite material construction with at least two different materials having different thermal conductivities. This allows the head to function as both a heating element and a heat distribution system, achieving uniform temperature distribution while maintaining relatively simple overall structure

Inventive Principle:
Principle #40Composite materials

2Device complexity

If the peripheral section area is too small, then the device complexity is reduced, but the temperature uniformity deteriorates

Engineering Contradiction:
Improvehead designVSAvoidtemperature uniformity
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent specifies that the peripheral section area should be 30-70% of the total head area, with optimal range of 40-60%. This quantitative parameter optimization ensures sufficient heat distribution to peripheral regions while avoiding excessive complexity in head design

Inventive Principle:
Principle #35Parameter changes

3Productivity

If the bonding temperature is increased, then the bonding speed is improved, but the temperature uniformity deteriorates

Engineering Contradiction:
Improvebonding speedVSAvoidtemperature uniformity
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

Different sections of the head have optimized thermal conductivities to achieve uniform temperature distribution at bonding temperatures above the underfill melting point. The central section maintains higher temperature for rapid heating, while the peripheral section ensures even heat distribution, enabling fast bonding without sacrificing uniformity

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design ensures uniform bonding properties by maintaining temperatures above the melting point of the underfill across the bonding area, preventing non-filling phenomena and enhancing the bonding process efficiency.

Implementation Method 1

a thermal conductivity of the peripheral section is higher than a thermal conductivity of the central section

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a thermal conductivity of the peripheral section is higher than a thermal conductivity of the central section

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

the collet includes a central vacuum channel extending vertically through the collet, and an outer vacuum channel communicating with the central vacuum channel

Methodology Applied
Scientific EffectVacuum pressure: Vacuum

Data Source

PatentUS11607741B2Semiconductor chip bonding apparatus including head having thermally conductive materials
Publication Date: 2023.03.21 SAMSUNG ELECTRONICS CO LTD
  • US11607741B2 patent drawing
  • US11607741B2 patent drawing
  • US11607741B2 patent drawing

AI summary

Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.