Bonding Head Heating Zones for Uniform Chip Bonding
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Solution Overview
Problem
Existing semiconductor device manufacturing techniques face challenges in achieving uniform temperature distribution during chip bonding, as the heat absorption rate varies across the chip, leading to non-uniform bonding and gap issues due to a single heating system.
Innovation Solution
A semiconductor device manufacturing device with a bonding head featuring a first and second heating area, each with independent temperature control, and cooling systems, allowing for precise temperature management to achieve uniform in-plane temperature distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single heating system is used to heat the semiconductor chip, then the heating structure is simple, but the temperature distribution across the chip becomes non-uniform due to varying heat absorption rates at different locations
Solution Approach 1:
The heating part is divided into multiple heating areas (first heating area and second heating area) with different heating powers. The first heating area corresponds to the central portion of the semiconductor chip and provides lower heating power, while the second heating area corresponds to the peripheral edge portion and provides higher heating power. This segmentation allows independent control of heating power for different regions, resolving the contradiction between structural simplicity and temperature distribution uniformity.
Solution Approach 2:
Different heating powers are applied to different locations of the semiconductor chip based on their specific heat absorption characteristics. The peripheral edge portion receives higher heating power due to its higher heat absorption rate, while the central portion receives lower heating power. This local quality approach ensures uniform temperature distribution across the chip by tailoring the heating characteristics to the specific needs of each region.
2Temperature
If heating power is increased to compensate for higher heat absorption at peripheral edges, then temperature uniformity improves, but overall energy consumption increases
Solution Approach 1:
The heating part applies different heating powers to different regions: the first heating area (central portion) uses lower heating power while the second heating area (peripheral edge portion) uses higher heating power. This localized approach ensures that energy is consumed only where needed to compensate for higher heat absorption, rather than uniformly increasing power across the entire chip, thus improving temperature uniformity without excessive energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables controlled temperature distribution across the semiconductor chip, ensuring uniform bonding and preventing issues like poor bonding and non-uniform gaps by independently managing heat generation and cooling across distinct heating areas.
Implementation Method 1
a heating part that detachably holds the attachment and heats the attachment
Implementation Method 2
cooling systems, allowing for precise temperature management
Implementation Method 3
the bonding tool heats the semiconductor chip to be bonded while pressurizing the semiconductor chip
Data Source
AI summary
A semiconductor device manufacturing device (10) comprises: a stage (16) on which a substrate (100) is loaded; a bonding head (14) that is disposed facing the stage (16) and that bonds a semiconductor chip (110) to the substrate (100); and a controller (18). The bonding head (14) includes: an attachment (33) that holds the semiconductor chip (110) by suctioning; and a heating part (31) that detachably holds the attachment (33) and that heats the attachment (33). The heating part (31) has a first heating area (32a) and a second heating area (32b) that surrounds the first heating area (32a) in the horizontal direction. The controller (18) controls the temperatures of the first heating area (32a) and the second heating area (32b) independently.