Bonding Enhancement Layer for Stronger Dielectric-Substrate Joining
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Solution Overview
Problem
Existing semiconductor technologies face challenges in achieving strong bonding between substrates due to varying materials and configurations, which can affect the integrity and performance of semiconductor devices.
Innovation Solution
Incorporating bonding enhancement layers made of materials with higher bonding forces to the dielectric layers, such as MnSiO, between conductive patterns and dielectric layers, to enhance the bonding strength between substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional conductive materials are used directly in contact with dielectric layers, then device structure is simple, but bonding strength between substrates is insufficient
Solution Approach 1:
A bonding enhancement layer is introduced as an intermediary between the conductive pattern and the dielectric layer. This bonding enhancement layer includes a bonding enhancement material that forms strong bonds with the dielectric layer, thereby improving the overall bonding strength between substrates without requiring fundamental changes to the device architecture.
Solution Approach 2:
The bonding enhancement layer is formed by combining a conductive material with a bonding enhancement material. This composite structure allows the layer to simultaneously provide electrical conductivity and enhanced bonding strength to the dielectric layer, resolving the contradiction between structural simplicity and bonding strength requirements.
2Strength
If bonding enhancement layers with higher bonding force materials are introduced, then bonding strength increases, but manufacturing process complexity increases
Solution Approach 1:
The bonding enhancement material is merged with the conductive material in the bonding enhancement layer. This combination allows the layer to be formed in a single process step using conventional semiconductor manufacturing techniques, thereby improving bonding strength without significantly increasing manufacturing process complexity.
Solution Approach 2:
The bonding enhancement material changes the chemical and physical parameters of the bonding interface between the conductive pattern and dielectric layer. By selecting materials with specific bonding characteristics, the bonding strength is enhanced while maintaining compatibility with existing manufacturing processes through parameter optimization rather than process redesign.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of bonding enhancement layers significantly increases the bonding strength between substrates, leading to improved semiconductor device performance and reliability.
Implementation Method 1
the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer
Data Source
AI summary
A semiconductor device including a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer, the second conductive pattern directly contacting the first conductive pattern; and a first bonding enhancement layer between the first conductive pattern and the second dielectric layer, wherein the first bonding enhancement layer includes the first bonding enhancement material or a material of the second dielectric layer, and the first bonding enhancement material includes a material having a higher bonding force to the material of the second dielectric layer than a bonding force of the first conductive material to the material of the second dielectric layer.