Semiconductor Bonding Layer Via Structure for Low-Resistance Leads
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Solution Overview
Problem
The existing semiconductor devices face increased electrical resistance between the semiconductor element and the lead due to the low conductivity of the bonding layer, which degrades the device's performance, particularly in high-frequency applications.
Innovation Solution
Incorporating a second metal layer with higher conductivity than the bonding layer, which penetrates the bonding layer to electrically connect the first metal layer to the lead, thereby reducing electrical resistance and improving device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a bonding layer is used to connect the first metal layer to the lead, then the device structure is simplified and manufacturing is easier, but the electrical resistance increases due to low conductivity
Solution Approach 1:
The bonding layer is segmented into two functional parts: a first bonding layer portion for mechanical bonding and a second bonding layer portion (via hole) for electrical connection. This segmentation allows the bonding layer to fulfill both bonding and low-resistance electrical connection functions, resolving the contradiction between ease of manufacture and electrical resistance.
Solution Approach 2:
The bonding layer is designed to perform multiple functions simultaneously: mechanical bonding between the first metal layer and lead, and electrical conduction through the via hole. By making the bonding layer multi-functional, the invention eliminates the need for separate bonding and electrical connection structures, reducing resistance while maintaining ease of manufacture.
2Strength
If the bonding layer thickness is increased to improve bonding strength, then the mechanical connection is stronger, but the electrical resistance increases
Solution Approach 1:
The bonding layer exhibits local quality variations: it has greater thickness at the bonding interfaces (first and second bonding layer portions) for mechanical strength, and a controlled thickness in the via hole region (second bonding layer portion) for optimal electrical conduction. This local quality optimization resolves the contradiction between bonding strength and electrical resistance.
Solution Approach 2:
The invention transitions from a uniform two-dimensional bonding layer to a three-dimensional structure with a via hole penetrating through it. This dimensional change allows the bonding layer to provide both mechanical strength (through increased material at interfaces) and electrical conduction (through the via hole path), resolving the thickness-related contradiction.
3Reliability
If a via hole is formed in the bonding layer to reduce resistance, then the electrical conductivity improves, but the manufacturing complexity increases
Solution Approach 1:
The via hole formation process is merged with the existing bonding layer fabrication process. The via hole is formed as part of the bonding layer structure rather than as a separate subsequent step, integrating electrical connection functionality into the bonding process itself and minimizing additional manufacturing complexity.
Solution Approach 2:
The via hole is formed in the bonding layer during the bonding process itself, before final device assembly. This preliminary action allows the electrical connection path to be established early in manufacturing, simplifying subsequent processing steps and reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a higher conductivity second metal layer effectively reduces electrical resistance, enhances high-frequency characteristics, and increases current capacity, leading to improved performance and miniaturization of semiconductor devices.
Implementation Method 1
a bonding layer bonded onto the first metal layer and formed of a sintered metal or solder
Implementation Method 2
a bonding layer bonded onto the first metal layer and formed of a sintered metal or solder
Implementation Method 3
the second metal layer electrically connecting the first metal layer to the lead
Data Source
AI summary
A semiconductor device includes a semiconductor element, a first metal layer electrically connected to the semiconductor element, a bonding layer bonded onto the first metal layer and formed of a sintered metal or solder, a lead bonded onto the bonding layer, and a second metal layer provided in a first hole penetrating the bonding layer, the second metal layer electrically connecting the first metal layer to the lead.