Bonding Structure Layout for Mixed-Density Hybrid Bonding Pads
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Solution Overview
Problem
The integration density differences of bonding pads on different wafers cause bonding errors during hybrid bonding, which complicates the assembly of small-sized dies in semiconductor devices.
Innovation Solution
A bonding structure with distinct bonding regions and wiring configurations, where the first bonding region has a higher pad density and insulation layer, and the second bonding region has a lower pad density with integrated wiring, allowing for uniform hybrid bonding without intervening materials, thus addressing the integration density mismatch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If hybrid bonding is performed with different bonding pad densities on different wafers, then integration capacity increases, but bonding errors occur due to density mismatch
Solution Approach 1:
The bonding structure is divided into a first bonding region with first bonding pads at a first density and a second bonding region with second bonding pads at a second density. This local differentiation allows each region to be optimized for its specific function while maintaining overall bonding compatibility through the use of bonding insulation layers and wirings that bridge the density differences.
Solution Approach 2:
Bonding insulation layers and bonding wirings are introduced as intermediary elements between the bonding pads of different densities. These intermediaries facilitate the hybrid bonding process by providing a transition structure that accommodates the density mismatch while ensuring reliable electrical connection and mechanical bonding.
2Quantity of substance
If bonding pads are densely distributed to increase integration density, then component integration capacity increases, but bonding uniformity across the wafer decreases
Solution Approach 1:
Different regions of the bonding surface are assigned different pad densities according to their functional requirements. The first bonding region uses high density for maximum integration, while the second bonding region uses lower density to maintain bonding uniformity and accommodate wiring structures. This spatial variation in quality resolves the contradiction between density and uniformity.
Solution Approach 2:
The bonding surface is segmented into multiple regions with different bonding pad arrangements. This segmentation allows the system to simultaneously achieve high integration density in critical areas while maintaining bonding uniformity in other areas, thereby resolving the contradiction between these two requirements.
3Adaptability or versatility
If bonding insulation layers are added to accommodate density differences, then bonding compatibility improves, but device structure complexity increases
Solution Approach 1:
The bonding insulation layers serve multiple functions simultaneously: they provide electrical insulation between bonding pads, facilitate the hybrid bonding process by accommodating density differences, and provide structural support for the bonding wirings. This multi-functionality reduces the need for additional specialized components, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration prevents bonding errors by ensuring uniform hybrid bonding across the wafer surfaces, enhancing the electrical characteristics and operational stability of the semiconductor device.
Implementation Method 1
a first bonding insulation layer positioned between the first bonding pads... The second bonding insulation layer may insulate the second bonding pad
Implementation Method 2
The first bonding pads and the first bonding insulation layer of the first structure may be hybrid-bonded to the third bonding pads and the third bonding insulation layer of the second structure, respectively
Data Source
AI summary
A bonding structure may include a bonding surface in which components may be integrated. The bonding surface may include a first bonding region, a second bonding region and at least one bonding wiring. The first bonding region may include a plurality of first bonding pads and a first bonding insulation layer. The first bonding pads may be distributed in a first density. The first bonding insulation layer may be positioned between the first bonding pads. The second bonding region may include a plurality of second bonding pads and a second bonding insulation layer. The second bonding pads may be distributed in a second density less than the first density. The second bonding insulation layer may be positioned between the second bonding pads. The bonding wiring may be exposed toward the bonding surface in the second bonding region. The bonding wiring may receive a voltage from an external device.