Multi-step Bonding Pad for MIM Capacitor Crack Prevention
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Solution Overview
Problem
The increasing complexity of semiconductor device manufacturing poses challenges in modifying and improving the manufacturing operations due to the involvement of various materials and components, particularly in preventing cracks from extending into capacitor structures during the formation of bonding pads.
Innovation Solution
A bonding pad with a multi-step edge or non-straight contour is formed over a metal-insulator-metal (MIM) capacitor, providing additional surface area to act as a stress buffer and crack-stopper, embedded between insulating layers to prevent crack penetration into the capacitor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional bonding pad structure is used, then the manufacturing process is simple, but cracks can extend into the capacitor structure during bonding pad formation
Solution Approach 1:
The bonding pad structure is segmented into multiple levels with different heights, creating a multi-step configuration. This segmentation allows the bonding pad to better accommodate stress differences between layers, preventing crack propagation into the capacitor structure while maintaining manufacturing feasibility through selective etching processes.
Solution Approach 2:
The bonding pad structure implements local quality by creating regions with different heights and properties. The multi-step configuration provides localized stress relief zones where needed, while other regions maintain standard characteristics. This allows targeted crack prevention without requiring complete structural redesign.
2Reliability
If the bonding pad area is increased to provide more stress buffer, then crack prevention improves, but the device area占用 increases
Solution Approach 1:
The solution transitions from a two-dimensional area expansion approach to a three-dimensional multi-level structure. By vertical segmentation, the bonding pad provides enhanced stress buffer capability through increased volume and structural complexity rather than horizontal area expansion, thus preventing crack propagation without excessive area occupation.
Solution Approach 2:
The multi-step bonding pad structure embeds multiple functional levels within a compact footprint. Different height levels are nested vertically, creating a compact configuration that provides extensive stress buffer capability within a limited planar area, effectively preventing cracks without excessive area occupation.
Data Source
AI summary
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first insulating layer formed over a conductive feature and a capacitor structure embedded in the first insulating layer. The semiconductor device also includes a bonding pad formed over the first insulating layer and corresponding to the capacitor structure. The bonding pad has a top surface and a multi-step edge to form at least three corners. In addition, the semiconductor device structure includes a second insulating layer conformally covering the at least three corners formed by the top surface and the multi-step edge of the bonding pad.