Bonding Pad Heat-Sink Structure for Overstress Ruggedness
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high thermal and mechanical ruggedness, particularly during electrical overstress events that cause thermal stress and potential melting of bonding pads, leading to reduced avalanche and short-circuit ruggedness.
Innovation Solution
Incorporating a supplemental structure with a higher specific heat capacity than the base layer next to the bonding region, which can temporarily absorb and store thermal energy, preventing local overheating and melting of the bonding pad, and enhancing the device's mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the bonding pad is made more rugged to accommodate mechanical strain during bonding, then mechanical strength is improved, but thermal capacity may be limited by the base layer material properties
Solution Approach 1:
The bonding pad is constructed as a composite structure with a base layer (first material) and a supplemental structure (second material) having different specific heat capacities. The second material is selected to have a higher specific heat capacity than the first material, creating a composite bonding pad that combines the mechanical properties of the base layer with the thermal energy absorption capabilities of the supplemental structure.
Solution Approach 2:
The supplemental structure is positioned specifically adjacent to the bonding region where thermal management is most critical. This localized addition of high heat capacity material provides targeted thermal protection exactly where the bond wire or clip contacts the bonding pad, without unnecessarily modifying the entire bonding pad structure or adding excessive mechanical complexity.
2Ease of manufacture
If the bonding pad structure is simplified to reduce manufacturing complexity, then ease of manufacture is improved, but thermal and mechanical ruggedness during electrical overstress events deteriorates
Solution Approach 1:
The bonding pad is segmented into functionally distinct components: a base layer that provides mechanical strength and structural support, and a supplemental structure that provides enhanced thermal energy absorption. This segmentation allows each component to be optimized for its specific function while maintaining a relatively simple overall manufacturing process that can be integrated into existing semiconductor fabrication workflows.
Solution Approach 2:
The invention changes the material parameter (specific heat capacity) by introducing a second material with higher specific heat capacity than the base layer material. This parameter change enables the bonding pad to absorb more thermal energy during electrical overstress events without requiring complex structural modifications or additional manufacturing steps beyond standard thin-film deposition or patterning techniques.
3Temperature
If a supplemental structure with higher specific heat capacity is added next to the bonding region, then thermal energy absorption is improved, but device structure becomes more complex
Solution Approach 1:
The supplemental structure is positioned specifically adjacent to the bonding region where thermal management is most critical. This localized addition of high heat capacity material provides targeted thermal protection exactly where the bond wire or clip contacts the bonding pad, without unnecessarily modifying the entire bonding pad structure or adding excessive mechanical complexity.
Solution Approach 2:
The bonding pad is constructed as a composite structure with a base layer (first material) and a supplemental structure (second material) having different specific heat capacities. The second material is selected to have a higher specific heat capacity than the first material, creating a composite bonding pad that combines the mechanical properties of the base layer with the thermal energy absorption capabilities of the supplemental structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The supplemental structure effectively increases the thermal and mechanical ruggedness of semiconductor devices by acting as a local heat sink, preventing melting and improving the device's performance during repeated avalanche and short-circuit events.
Implementation Method 1
a supplemental structure with a higher specific heat capacity than the base layer next to the bonding region, which can temporarily absorb and store thermal energy
Implementation Method 2
The supplemental structure effectively increases the thermal and mechanical ruggedness of semiconductor devices by acting as a local heat sink
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming a base portion of a bonding pad on a semiconductor portion, the base portion further comprising a base layer; forming a main surface of the bonding pad, the main surface comprising a bonding region; bonding a bond wire or clip to the bonding region; and forming a supplemental structure directly on the base portion. The supplemental structure laterally adjoins the bond wire or clip or is laterally spaced apart from the bond wire or clip. A volume-related specific heat capacity of the supplemental structure is higher than a volume-related specific heat capacity of the base layer.