Semiconductor Bonding Pad Air Gaps for Interconnect Stress Relief
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices leads to deficiencies in manufacturing and integration processes, necessitating improvements in the manufacturing process to address these issues.
Innovation Solution
A semiconductor device with an interconnect structure and porous dielectric portions separated by air gaps, where a bonding pad is formed over the dielectric layer and porous dielectric portions, and air gaps are created between them through a heat treatment process, providing a cushion during the bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If manufacturing operations are increased to provide greater functionality in miniaturized semiconductor devices, then device functionality and integration are improved, but manufacturing complexity and process deficiencies increase
Solution Approach 1:
The semiconductor device is divided into distinct functional regions including first and second active regions separated by a deep trench, with independent interconnect structures for each region. This segmentation allows different functionality to be integrated while maintaining manageable manufacturing processes for each segment
Solution Approach 2:
The patent introduces a vertical dimension by creating a deep trench that extends through multiple interconnect layers, separating active regions in the vertical direction rather than only horizontally. This enables increased functionality without proportionally increasing planar manufacturing complexity
2Volume of moving object
If device size is reduced for miniaturization, then integration density is improved, but stress management and manufacturing precision become more difficult
Solution Approach 1:
Air gaps are intentionally created between the bonding pad and porous dielectric portion, and between porous dielectric portions, to provide cushioning that absorbs stress during bonding and operation. This prevents stress concentration in the miniaturized device structure
Solution Approach 2:
Porous dielectric materials are used in the interconnect structure, providing mechanical compliance and stress absorption capability. The porous structure allows for stress management while maintaining electrical insulation in the miniaturized device
3Adaptability or versatility
If interconnect layers are increased for greater functionality, then device capability is improved, but manufacturing process complexity increases
Solution Approach 1:
The interconnect structure is segmented into first and second interconnect layers with distinct porous dielectric portions for each active region. This segmentation simplifies manufacturing by allowing independent processing of each interconnect region despite multiple layers
Solution Approach 2:
Porous dielectric portions serve as intermediary structures between different interconnect layers and active regions, providing mechanical support and stress management while enabling complex interconnect routing without proportionally increasing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gaps act as a cushion, reducing stress on the underlying structure, thereby enhancing the performance, reliability, and yield of the semiconductor device.
Implementation Method 1
the air gaps act as a cushion to reduce the impact of the stress from the wire bond on the underlying structure
Implementation Method 2
performing a heat treatment process to form a first air gap between the first porous dielectric portion and the bonding pad
Data Source
AI summary
A semiconductor device includes an interconnect structure disposed over a semiconductor substrate. The interconnect structure includes a first interconnect portion and a second interconnect portion. The semiconductor device also includes a first porous dielectric portion disposed between the first interconnect portion and the second interconnect portion, and a dielectric layer surrounding the first porous dielectric portion. The semiconductor device further includes a bonding pad disposed over the dielectric layer and the first porous dielectric portion. The bonding pad and the first porous dielectric portion are separated by a first air gap.