Semiconductor Bonding Pad Spacer Alignment and Moisture Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacturing and integration of semiconductor devices face challenges such as poor electrical interconnection, misalignment of bonding components, and moisture-induced deterioration due to their miniaturized scale and increased complexity.
Innovation Solution
A semiconductor device configuration is introduced, featuring a bonding pad with spacers and dielectric layers, including silicon-rich oxide, to prevent short circuits and improve alignment, and a conductive bump electrically connected to the source/drain region through the bonding pad, with spacers and passivation layers to protect against moisture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are miniaturized to reduce size, then device size is reduced, but manufacturing complexity increases and reliability deteriorates
Solution Approach 1:
The patent divides the bonding pad structure into multiple functional segments: the bonding pad itself, spacers (first and second), dielectric layers, and passivation layers. Each segment performs a specific function - the bonding pad for electrical connection, spacers for alignment and spacing, dielectric layers for insulation, and passivation layers for protection. This segmentation allows the device to maintain compact size while managing complexity through functional decomposition.
Solution Approach 2:
The patent employs a nested structure where the first spacer is disposed over the bonding pad, the second spacer is disposed over the first spacer, and passivation layers are disposed over the spacers. This nested arrangement allows multiple functional layers to be stacked vertically, reducing the horizontal footprint and maintaining device miniaturization while providing each layer with its specific function without increasing overall device complexity.
2Volume of moving object
If semiconductor devices are miniaturized, then device size is reduced, but electrical interconnection quality deteriorates
Solution Approach 1:
The patent applies different material properties and structural characteristics to different locations within the device. The bonding pad uses conductive material for electrical connection, the dielectric layer provides insulating properties between the bonding pad and semiconductor substrate, and the passivation layer provides protective properties. This local differentiation of material qualities ensures optimal electrical interconnection performance in each region while maintaining overall device miniaturization.
3Volume of moving object
If bonding components are reduced in size, then device size is reduced, but alignment precision deteriorates
Solution Approach 1:
The patent introduces spacers as intermediary structures between the bonding pad and overlying layers. The first spacer is disposed over the bonding pad and the second spacer is disposed over the first spacer, creating a stepped structure that provides alignment references and spacing. These intermediary spacers facilitate precise alignment of subsequent layers during manufacturing, even as device dimensions are reduced, by providing physical references and maintaining appropriate distances between components.
4Ease of manufacture
If device structure is simplified, then manufacturing is easier, but protection against moisture deteriorates
Solution Approach 1:
The patent employs a composite multi-layer structure consisting of the bonding pad, dielectric layer, spacers, and passivation layer. Each layer is made of materials with specific properties - the dielectric layer provides electrical insulation, while the passivation layer provides environmental protection. This composite structure achieves both manufacturing feasibility through standardized layer deposition processes and effective moisture protection through the protective passivation layer, without requiring overly complex manufacturing procedures.
Data Source
AI summary
The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad. The semiconductor device also includes a dielectric liner disposed between the first spacer and the bonding pad; and a first passivation layer covering the second spacer, wherein the dielectric liner is L-shaped, and the first spacer is separated from the bonding pad by the dielectric liner.