Bonding Pad Spacer and Passivation for Semiconductor Alignment
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices face challenges such as poor electrical interconnection, misalignment of bonding components, and moisture-induced deterioration due to their miniaturized scale and increased complexity, which affect device performance and yield.
Innovation Solution
A semiconductor device configuration that includes a bonding pad with spacers and passivation layers, where the spacers prevent short circuits and misalignment issues, and silicon-rich oxide layers reduce moisture contamination, along with a method for forming these structures to enhance electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the bonding pad structure is simplified without spacers, then the device complexity is reduced, but misalignment of bonding components and short circuits occur
Solution Approach 1:
A spacer structure is introduced as an intermediary element between the bonding pad and surrounding structures. The spacer serves as a physical guide and barrier that ensures precise alignment of bonding components during assembly, preventing misalignment without requiring complex bonding pad designs. The spacer acts as a mediator that simplifies the overall structure while maintaining manufacturing precision.
2Ease of manufacture
If passivation layers with standard oxide are used, then the manufacturing process is simpler, but moisture-induced deterioration occurs
Solution Approach 1:
The passivation layer is modified by changing the silicon oxide content parameter from standard levels to enhanced levels (silicon-rich oxide). This parameter change increases the moisture barrier properties and reliability of the passivation layer while maintaining compatibility with standard manufacturing processes. The increased silicon content creates a denser, more moisture-resistant structure without requiring entirely new fabrication methods.
3Reliability
If the bonding pad is made larger to improve electrical connection, then electrical interconnection is improved, but the device area increases
Solution Approach 1:
The spacer structure extends the bonding pad functionality into the vertical dimension by creating raised sidewalls. This dimensional transition allows the bonding pad to maintain effective electrical connection area while reducing its footprint on the device plane. The vertical extension of the spacer provides additional bonding surface area without increasing the horizontal device area.
Data Source
AI summary
The present application provides a method for preparing a semiconductor device, include the following steps: forming a source/drain (S/D) region in a semiconductor substrate; forming a bonding pad over the semiconductor substrate; forming a first spacer over a sidewall of the bonding pad; forming a first passivation layer covering the bonding pad and the first spacer; and forming a conductive bump over the first passivation layer, wherein the conductive bump penetrates through the first passivation layer to electrically connect to the bonding pad and the S/D region.