Semiconductor Bonding Surface Roughness for Radial Bond Waves
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing bonding procedures in manufacturing memory devices result in undesirable bond waves, leading to misalignment between semiconductors due to stresses, deformities, component layouts, and surface roughness, which are not adequately addressed by current methods.
Innovation Solution
Surface modifications are applied to semiconductors prior to bonding, involving etching specific patterns to create controlled roughness variations, ensuring a consistent bond wave velocity and alignment, thereby achieving a radial bond wave.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional bonding procedures are used, then bonding process is simple, but misalignment occurs due to stresses, deformities, and surface roughness
Solution Approach 1:
The patent applies preliminary surface modifications including etching specific patterns and controlling surface roughness before bonding occurs. This preliminary action prepares the semiconductor surfaces to compensate for stresses and deformities that will occur during bonding, thereby achieving radial bond waves and precise alignment without requiring excessively complex bonding equipment or procedures.
Solution Approach 2:
The patent introduces local quality variations by etching specific patterns (such as crosshatch patterns) on portions of the semiconductor surfaces. These localized surface modifications create controlled roughness variations that affect bond wave velocity in specific regions, allowing compensation for local stresses and deformities to achieve overall radial bond wave propagation and precise alignment.
2Manufacturing precision
If surface modifications are applied to control bond wave velocity, then alignment precision improves, but manufacturing process complexity increases
Solution Approach 1:
The patent changes surface parameters by controlling surface roughness through etching processes. Specific patterns are etched to create controlled roughness variations that directly affect bond wave velocity. By modifying the surface roughness parameter in specific regions, the patent achieves consistent radial bond wave propagation and precise alignment while managing process complexity through systematic pattern design.
3Manufacturing precision
If precision equipment is used to achieve alignment, then manufacturing precision improves, but equipment cost and complexity increase
Solution Approach 1:
The patent enables the semiconductor surfaces to self-align through controlled surface modifications. By etching specific patterns and controlling surface roughness, the surfaces create their own alignment guidance through radial bond wave propagation. This self-service mechanism reduces reliance on externally complex precision equipment, as the surfaces themselves provide the alignment function through their modified properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces misalignment and reliance on precision equipment, enhances manufacturing precision, and minimizes material waste by optimizing bond wave velocity and alignment.
Implementation Method 1
A first wafer and a second wafer are etched, such that the first wafer has a first surface roughness and the second wafer has a second surface roughness
Data Source
AI summary
Methods, systems, and devices for surface modifications during bonding procedures are described. A memory device may be manufactured by polishing a first semiconductor and a second semiconductor, where the first semiconductor has a first surface and a second surface, and the second semiconductor has a third surface and a fourth surface. The first surface and the third surface may be polished to have a first roughness. Accordingly, a portion of the first surface may be etched according to a pattern, where the portion of the first surface has a second roughness that is different than the first roughness. Similarly, a portion of the third surface may be etched according to a second pattern, where the portion of the third surface has the second roughness. Based on etching the first surface and the third surface, the first surface and the third surface may be bonded.