Bonding Wire Joint Reliability Prediction Through Crack Growth Modeling
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Solution Overview
Problem
Current methods for predicting the lifetime of semiconductor devices require long-term accelerated reliability tests, which hinder quick product development and increase development time and costs.
Innovation Solution
A method that calculates the change of alloy phases, sets metal oxide phases, calculates elastic strain energy, and predicts crack progression at the bonding portion between electrode pads and wires to estimate the semiconductor device's lifetime without relying on long-term tests.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If long-term accelerated reliability tests are conducted until strict criterion to ensure lifetime, then reliability prediction accuracy is improved, but development time is significantly extended
Solution Approach 1:
The patent performs preliminary calculations of alloy phase changes, metal oxide phase generation, elastic strain energy, and crack progression using computational models before conducting actual reliability tests. This preliminary action provides initial predictions that guide the testing process, allowing for early assessment of device lifetime without waiting for complete long-term test results, thus reducing development time while maintaining prediction accuracy
Solution Approach 2:
The patent creates a virtual model (copy) of the bonding portion that replicates the physical structure and material properties. This computational model allows for simulated reliability testing and lifetime prediction without requiring actual long-term physical tests, enabling rapid assessment of device reliability and significantly shortening the development cycle while maintaining prediction accuracy
2Measurement precision
If accelerated reliability tests are performed for extended periods to estimate lifetime, then lifetime estimation accuracy is improved, but productivity is reduced
Solution Approach 1:
The patent replaces the mechanical/physical system of long-term accelerated reliability testing with a computational system that uses phase field methods, corrosion reaction models, and elastic strain energy calculations. This substitution enables rapid lifetime estimation through simulation rather than physical testing, dramatically improving product development speed while maintaining estimation accuracy through sophisticated modeling
3Measurement precision
If comprehensive alloy phase analysis and crack progression modeling are performed, then prediction accuracy is improved, but calculation complexity increases
Solution Approach 1:
The patent segments the complex reliability prediction problem into distinct computational modules: alloy phase change calculation, metal oxide phase generation, elastic strain energy computation, and crack progression modeling. Each module handles a specific aspect of the prediction, making the overall complex system more manageable and implementable while achieving high prediction accuracy through the integration of these specialized sub-systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the prediction of semiconductor device lifetime in a shorter timeframe, reducing development time and costs, while improving prediction accuracy and allowing for early visualization of alloy phase changes and crack growth.
Implementation Method 1
setting a generation of a metal oxide phase caused by a corrosion reaction, based on an initial crack structure of the bonding portion
Implementation Method 2
calculating an elastic strain energy at each of specified portions of the bonding portion
Data Source
AI summary
A reliability prediction method includes: calculating a change of each of a plurality of alloy phases at a bonding portion between an electrode pad and a bonding wire; setting a generation of a metal oxide phase caused by a corrosion reaction, based on an initial crack structure of the bonding portion; calculating an elastic strain energy at each of specified portions of the bonding portion; setting a progress of a crack, based on the elastic strain energy at each of the specified portions; and predicting a lifetime of the semiconductor device, based on a length of the crack due to the progress of the crack.