Boost Capacitor Pixel Circuit Layout for Stable OLED Driving

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Solution Overview

Problem

Organic light emitting devices face issues with increased power consumption, reduced aperture ratio, and deteriorated reliability due to high-speed driving processes that increase current density and driving voltage, leading to transistor stains and instability.

Innovation Solution

A display device design incorporating polycrystalline silicon semiconductors for driving transistors and oxide semiconductors for other transistors, with specific electrode and initialization voltage line configurations, including overlapping initialization voltage lines and connection electrodes, to stabilize operation and reduce power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high-speed driving process is used to increase pixel count and resolution, then productivity is improved, but reliability deteriorates due to transistor stains and instability

Engineering Contradiction:
Improvepixel countVSAvoidtransistor stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the material parameter of the semiconductor layer from conventional material to polycrystalline silicon, which has superior electrical characteristics and stability. This material parameter change enables the transistor to withstand high-speed driving conditions without degrading, allowing increased pixel count while maintaining reliability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure combining polycrystalline silicon semiconductor layer with specific electrode materials and insulating layers. This composite material approach creates a transistor structure that is more resistant to stains and degradation under high-current-density conditions, enabling high-resolution displays with improved reliability.

Inventive Principle:
Principle #40Composite materials

2Productivity

If current density is increased to achieve high-speed driving, then productivity is improved, but harmful factors increase leading to transistor degradation

Engineering Contradiction:
Improvedriving speedVSAvoidtransistor stains
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the semiconductor material parameter to polycrystalline silicon, which has lower resistance and better current carrying capacity. This allows high current density to be applied for fast driving without generating harmful thermal effects or stains that would degrade the transistor.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a polycrystalline silicon semiconductor layer that can withstand high current density and repeated switching cycles without degrading. This durable material replaces conventional materials that would quickly degrade under high-speed driving conditions, effectively making the transistor resistant to the harmful effects of high current density.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Productivity

If driving voltage is increased for high-speed operation, then productivity is improved, but reliability deteriorates due to element degradation

Engineering Contradiction:
Improvedriving speedVSAvoidelement reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the electrical parameters of the transistor by using polycrystalline silicon semiconductor, which enables operation at higher driving voltages without breakdown. The material's superior electrical characteristics allow high-voltage driving for fast response while maintaining element reliability through optimized threshold voltage and channel conductivity.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12355020B2Display device having boost capacitor
Publication Date: 2025.07.08 SAMSUNG DISPLAY CO LTD
  • US12355020B2 patent drawing
  • US12355020B2 patent drawing
  • US12355020B2 patent drawing

AI summary

A display device includes a substrate, a polycrystalline semiconductor layer including a channel of a driving transistor, and a channel of a seventh transistor, a gate electrode of the driving transistor overlapping the channel thereof, a gate electrode of the seventh transistor overlapping the channel thereof, an oxide semiconductor layer including a channel of a fourth transistor, a gate electrode thereof overlapping the channel of the fourth transistor, a first initialization voltage line connected to a first electrode of the fourth transistor, the first initialization voltage line and the gate electrode of the fourth transistor being position on a same layer, and a second initialization voltage line connected to a second electrode of the seventh transistor, the second initialization voltage line and the first initialization voltage line being positioned on different layers from each other.