Boost Circuit for Amorphous Silicon Driving Transistors
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Solution Overview
Problem
Existing driving circuits for micro-LEDs and mini-LEDs face challenges with low electron mobility transistors, such as amorphous silicon transistors, which result in insufficient drive current due to low electron mobility and high manufacturing costs associated with high mobility transistors like low temperature polysilicon transistors.
Innovation Solution
The introduction of a boost module in the driving circuit increases the potential of the gate of the driving transistor, allowing for higher drive current while using low electron mobility transistors, thereby simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low temperature polysilicon transistors are used as driving transistors, then electron mobility is high and drive current is sufficient, but manufacturing process becomes complicated and cost increases
Solution Approach 1:
The patent changes the electrical parameters of the amorphous silicon transistor by introducing a boost circuit that applies a voltage greater than the threshold voltage to the gate electrode. This parameter change enables the amorphous silicon transistor to achieve sufficient drive current despite its inherently low electron mobility, thereby resolving the contradiction between using simple/cheap amorphous silicon transistors and achieving high drive current typically requiring complex low temperature polysilicon transistors
2Ease of manufacture
If amorphous silicon transistors are used as driving transistors, then manufacturing cost is low and process is simple, but electron mobility is extremely low and drive current is insufficient
Solution Approach 1:
The patent introduces a boost circuit as an intermediary component between the signal source and the amorphous silicon transistor. This boost circuit acts as a mediator that transforms the input voltage into a boosted voltage with magnitude greater than the threshold voltage, which is then applied to the gate electrode of the amorphous silicon transistor. This intermediary enables the low-cost amorphous silicon transistor to achieve sufficient drive current by providing the necessary voltage boost without requiring expensive low temperature polysilicon transistors
Data Source
AI summary
A driving circuit includes a first power signal terminal, a second power signal terminal, a first driving transistor, a light-emitting element, a first storage module, a first boost module, a first light-emitting control module, and a data write module. The driving circuit includes a data write stage, a boost stage, and a light-emitting stage in a same frame. At the data write stage, the data write module transmits a first data signal to the first boost node. At the boost stage, the boost signal terminal transmits a boost signal to the first boost module to increase a potential of the first boost node. At the light-emitting stage, the first light-emitting control module is in conduction, and a signal of the first boost node is transmitted to the first node.