DC-DC Boost Circuit Gate Drive for Lower MOSFET Heat
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Solution Overview
Problem
DC-DC boost circuits in high-brightness liquid crystal displays and micro-light-emitting diode displays face issues with excessive temperature due to the use of small package MOSFETs without heat sinks, leading to high power consumption and heat generation.
Innovation Solution
A DC-DC boost circuit with a control module that provides a control signal with a high-level voltage of 0.5 to 0.8 times the maximum rated gate-source voltage of the power MOSFET, along with a sink current not less than 0.5A, to reduce power consumption and heat generation by increasing the gate-source voltage during turn-on and providing a large sink current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If small package power MOSFETs without heat sinks are used, then the size and cost of the DC-DC boost circuit are reduced, but the temperature of the MOSFET becomes excessive
Solution Approach 1:
The patent changes the voltage parameter of the control signal to reduce MOSFET temperature. Specifically, it sets the high-level voltage to 0.5-0.8 times the maximum rated gate-source voltage, and ensures the sink current capability is at least 0.5A. This parameter optimization reduces conduction losses and turn-on losses, thereby reducing heat generation and MOSFET temperature without requiring larger packages or heat sinks.
2Ease of manufacture
If small package power MOSFETs without heat sinks are used, then the cost of the DC-DC boost circuit is reduced, but the temperature of the MOSFET becomes excessive
Solution Approach 1:
The patent optimizes control signal parameters (voltage set to 0.5-0.8 times maximum rated gate-source voltage, sink current capability of at least 0.5A) to reduce MOSFET temperature. This allows the use of cost-effective small package MOSFETs without heat sinks while maintaining acceptable operating temperatures through improved electrical parameter control rather than requiring expensive thermal management solutions.
3Loss of energy
If the high-level voltage of the control signal is increased to reduce conduction losses, then the power consumption is reduced, but the risk of exceeding the maximum rated gate-source voltage increases
Solution Approach 1:
The patent identifies the optimal voltage range as 0.5-0.8 times the maximum rated gate-source voltage. This parameter setting achieves a balance: it provides sufficiently high gate voltage to reduce conduction losses and improve MOSFET on-state performance, while maintaining a safety margin below the maximum rated voltage to prevent reliability issues. The sink current capability of at least 0.5A further ensures proper gate charging.
Data Source
AI summary
The present disclosure belongs to the technical field of display. Provided are a DC-DC boost circuit and a driving circuit board. The DC-DC boost circuit includes a power MOSFET, and a control circuit electrically connected to a control terminal of the power MOSFET and configured to provide a control signal capable of controlling turn-on and turn-off of the power MOSFET. A voltage value of a high-level signal in the control signal is 0.5 to 0.8 times a maximum rated value of a gate-source voltage of the power MOSFET.