Boosting Capacitor Asymmetric Connecting Portion for OLED Luminance Uniformity

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Solution Overview

Problem

In organic light emitting display devices, differences in capacitance between boosting and storage capacitors can lead to luminance variations across pixels due to process variations, affecting uniformity in display gradation.

Innovation Solution

The design of the boosting capacitor includes a semiconductor layer with a hammer shape, a main body portion, a contact portion, and a connecting portion, where the connecting portion has a width smaller than the main body and contact portions, and is electrically coupled with the storage capacitor, minimizing capacitance differences caused by area and position variations during the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the boosting capacitor is designed to be smaller in capacity than the storage capacitor, then the pixel can achieve proper voltage boosting function, but the capacitance varies more significantly due to process variations

Engineering Contradiction:
Improvevoltage boosting functionVSAvoidcapacitance uniformity
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The patent changes the geometric parameters of the boosting capacitor, specifically making the connecting portion width equal to or smaller than half the main body portion width, and adjusting the overlapping area ratio between conductive layers and semiconductor layer to 30-70%. These parameter changes optimize the capacitance value while reducing sensitivity to process variations.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces asymmetric design in the boosting capacitor structure, where the connecting portion has a different width compared to the main body portion. This asymmetric configuration helps in achieving stable capacitance characteristics by reducing the impact of alignment variations during manufacturing processes.

Inventive Principle:
Principle #4Asymmetry

2Quantity of substance

If the boosting capacitor has larger overlapping area, then the capacitance value increases, but the luminance difference between pixels increases due to capacitance variations

Engineering Contradiction:
Improvecapacitance valueVSAvoidluminance uniformity
Core Design Contradiction:
Quantity of substanceVSIllumination intensity

Solution Approach 1:

The patent optimizes the overlapping area parameters to achieve a balance between capacitance value and uniformity. Specifically, the overlapping area ratio between the first conductive layer and semiconductor layer is set to 30-70%, which provides sufficient capacitance while minimizing the impact of process variations on luminance uniformity.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the connecting portion width is increased, then the electrical connection is improved, but the capacitance difference due to area variation increases

Engineering Contradiction:
Improveelectrical connectionVSAvoidcapacitance control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent employs asymmetric design where the connecting portion width is specifically controlled to be equal to or smaller than half the main body portion width. This creates an optimized balance between electrical connection reliability and capacitance control, reducing sensitivity to area variations while maintaining proper electrical connectivity.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS8436850B2Pixel and organic light emitting display device having the same
Publication Date: 2013.05.07 SAMSUNG DISPLAY CO LTD
  • US8436850B2 patent drawing
  • US8436850B2 patent drawing
  • US8436850B2 patent drawing

AI summary

A pixel including a boosting capacitor, wherein the boosting capacitor includes: a semiconductor layer, a first conductive layer overlapping the semiconductor layer at an overlapping portion, and a first insulating film therebetween, and wherein the semiconductor layer includes: a main body portion, a contact portion outside the overlapping portion and coupling the boosting capacitor with another component, and a connecting portion integrally provided with the main body portion and the contact portion to couple the main body portion with the contact portion at an interface of the first conductive layer and having a width smaller than that of the main body portion and the contact portion.