Bootstrap Power Semiconductor Circuit With Resistive HV Protection
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Solution Overview
Problem
Power semiconductor devices with bootstrap circuits face issues of increased size and reduced current charging due to the need for additional transistors to protect diodes from high voltages, which also increase electron movement distance and electrical resistance.
Innovation Solution
Incorporating a resistance unit with an N-type impurity diffusion region between the switching unit and the high voltage unit to drop high voltages below the breakdown voltage of the switching unit, eliminating the need for additional transistors and reducing electron movement distance and electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor is added between the high voltage unit and the diode to prevent high voltage damage, then the diode is protected from high voltage, but the device size increases and the electron movement distance increases reducing charging current
Solution Approach 1:
The patent introduces a resistance unit as an intermediary component between the high voltage unit and the switching unit. This resistance unit drops the high voltage to a level below the breakdown voltage of the switching unit, thereby protecting the switching unit from high voltage damage without requiring an additional transistor. The resistance unit acts as a mediator that transforms the high voltage into a safe level for the switching unit.
Solution Approach 2:
The patent changes the voltage parameter by introducing a resistance unit that drops the high voltage to a lower level. By adjusting the resistance value, the high voltage is transformed into a voltage that is below the breakdown voltage of the switching unit, enabling the switching unit to operate safely without additional protection transistors.
2Reliability
If a transistor is added between the high voltage unit and the diode to prevent high voltage damage, then the diode is protected from high voltage, but the electron movement distance increases reducing charging current to the capacitor
Solution Approach 1:
The resistance unit serves as an intermediary that allows electrons to pass through while dropping the voltage to a safe level. This intermediary approach maintains the charging current path without the need for additional transistors that would increase electron movement distance and reduce charging efficiency.
Solution Approach 2:
The patent replaces the mechanical/transistor-based protection mechanism with a passive resistance-based voltage dropping mechanism. This substitution eliminates the need for additional active components that would increase electron movement distance, thereby maintaining higher charging current to the capacitor.
3Reliability
If a transistor is added between the high voltage unit and the diode to prevent high voltage damage, then the diode is protected from high voltage, but the electrical resistance increases
Solution Approach 1:
The resistance unit is designed with an optimized resistance value that is sufficient to drop the high voltage to a safe level but minimal enough to avoid excessive energy loss. This intermediary component provides protection while maintaining acceptable electrical resistance characteristics for efficient operation.
Solution Approach 2:
The patent optimizes the resistance parameter of the resistance unit to achieve the right balance between voltage dropping capability and energy loss. By carefully selecting the resistance value, the system achieves adequate protection while minimizing electrical resistance and associated energy losses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the size of the power semiconductor device, increases current flow to the capacitor, and prevents damage to the switching unit by managing high voltages effectively.
Implementation Method 1
a resistance unit electrically connected between the switching unit and the high voltage unit and configured to drop the high voltage to a voltage lower than a breakdown voltage of the switching unit while the high voltage is output
Data Source
AI summary
A power semiconductor device includes a high voltage unit configured to output a high voltage, a low voltage unit configured to output a low voltage, a capacitor electrically connected to the high voltage unit and supplying power to the high voltage unit while the high voltage is output, a switching unit electrically connected to the high voltage unit and the capacitor and configured to connect the capacitor to a driving power source to charge the capacitor while the low voltage is output and to prevent the high voltage unit from being electrically connected to the driving power source while the high voltage is output, and a resistance unit electrically connected between the switching unit and the high voltage unit and configured to drop the high voltage to a voltage lower than a breakdown voltage of the switching unit while the high voltage is output.